Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient

Thermal oxidation of n-type GaN substrate in nitrous oxide (N20) ambient has been systematically investigated. The thermal oxidation process was performed in a horizontal quartz tube furnace under N20 ambient with now rate of 150 mL/min. The effects of oxidation times (30 - 120 min) and oxidation...

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Main Author:	Oon, Hooi Shy
Format:	Thesis
Language:	English
Published:	2013
Subjects:	TN1-997 Mining engineering Metallurgy
Online Access:	http://eprints.usm.my/61080/1/24%20Pages%20from%2000001780132.pdf
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id	my-usm-ep.61080
record_format	uketd_dc
spelling	my-usm-ep.610802024-09-10T02:42:26Z Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient 2013-03 Oon, Hooi Shy TN1-997 Mining engineering. Metallurgy Thermal oxidation of n-type GaN substrate in nitrous oxide (N20) ambient has been systematically investigated. The thermal oxidation process was performed in a horizontal quartz tube furnace under N20 ambient with now rate of 150 mL/min. The effects of oxidation times (30 - 120 min) and oxidation temperatures (700 - 1000C) on the thermal oxide grown on GaN were studied. Physical properties of the samples were then examined. Fourier Transform infrared spectrometer, X-ray diffraction and X-ray photoelectron spectroscopy were employed to identify the oxide layer formed on top of the GaN. Based on the analysis, Ga203 and GaON compounds were formed when thermally oxidized GaN at 700 to 900°C. However, for GaN thermally oxidized at 1000°C, non-stoichiometry Ga.O, and/or GaxOyNz compounds were formed. Apart from that, field-emission scanning electron microscope and atomic force microscope results revealed some distinct change on surface of all oxidized samples. The surface roughness of the oxide layer was also found to be increased with both the oxidation times and temperatures. 2013-03 Thesis http://eprints.usm.my/61080/ http://eprints.usm.my/61080/1/24%20Pages%20from%2000001780132.pdf application/pdf en public masters Perpustakaan Hamzah Sendut Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TN1-997 Mining engineering Metallurgy
spellingShingle	TN1-997 Mining engineering Metallurgy Oon, Hooi Shy Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
description	Thermal oxidation of n-type GaN substrate in nitrous oxide (N20) ambient has been systematically investigated. The thermal oxidation process was performed in a horizontal quartz tube furnace under N20 ambient with now rate of 150 mL/min. The effects of oxidation times (30 - 120 min) and oxidation temperatures (700 - 1000C) on the thermal oxide grown on GaN were studied. Physical properties of the samples were then examined. Fourier Transform infrared spectrometer, X-ray diffraction and X-ray photoelectron spectroscopy were employed to identify the oxide layer formed on top of the GaN. Based on the analysis, Ga203 and GaON compounds were formed when thermally oxidized GaN at 700 to 900°C. However, for GaN thermally oxidized at 1000°C, non-stoichiometry Ga.O, and/or GaxOyNz compounds were formed. Apart from that, field-emission scanning electron microscope and atomic force microscope results revealed some distinct change on surface of all oxidized samples. The surface roughness of the oxide layer was also found to be increased with both the oxidation times and temperatures.
format	Thesis
qualification_level	Master's degree
author	Oon, Hooi Shy
author_facet	Oon, Hooi Shy
author_sort	Oon, Hooi Shy
title	Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
title_short	Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
title_full	Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
title_fullStr	Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
title_full_unstemmed	Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
title_sort	growth and physical characterization of native oxide thin film on n-type gallium nitride substrate by ti-iermal oxidation in nitrous oxide ambient
granting_institution	Perpustakaan Hamzah Sendut
granting_department	Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate	2013
url	http://eprints.usm.my/61080/1/24%20Pages%20from%2000001780132.pdf
_version_	1811772875228577792

Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient

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