Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

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Main Author: Samsudin, Muhammad Esmed Alif
Format: Thesis
Language:English
Published: 2023
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf
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spelling my-usm-ep.612912024-10-15T00:49:27Z Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition 2023-03 Samsudin, Muhammad Esmed Alif QC1 Physics (General) This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattice period, and indium composition on InGaN based LED performance was studied. It was found that growing GaN nucleation at 570°C reduced threading dislocations (TDs) in the overgrown GaN layer (which served as the LED base layer). At 570°C nucleation, larger 3D growths (islands) formed, promoting dislocation inclination, and thus reducing TDs. Subsequently, 20 periods of In0.04Ga0.96N/GaN SLs led to reasonable V-pits size. This increased holes injection into the multiquantum well and hence, improved the LED performance. This research also attempted to find out factors which limit the use of GaN substrates in InGaN based LEDs development over sapphire substrates, particularly pattern sapphire substrate (PSS), which is widely used in many studies, including in this research. 2023-03 Thesis http://eprints.usm.my/61291/ http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf application/pdf en public phd doctoral Perpustakaan Hamzah Sendut Pusat Penyelidikan Teknologi Nano
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Samsudin, Muhammad Esmed Alif
Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
description This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattice period, and indium composition on InGaN based LED performance was studied. It was found that growing GaN nucleation at 570°C reduced threading dislocations (TDs) in the overgrown GaN layer (which served as the LED base layer). At 570°C nucleation, larger 3D growths (islands) formed, promoting dislocation inclination, and thus reducing TDs. Subsequently, 20 periods of In0.04Ga0.96N/GaN SLs led to reasonable V-pits size. This increased holes injection into the multiquantum well and hence, improved the LED performance. This research also attempted to find out factors which limit the use of GaN substrates in InGaN based LEDs development over sapphire substrates, particularly pattern sapphire substrate (PSS), which is widely used in many studies, including in this research.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Samsudin, Muhammad Esmed Alif
author_facet Samsudin, Muhammad Esmed Alif
author_sort Samsudin, Muhammad Esmed Alif
title Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
title_short Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
title_full Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
title_fullStr Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
title_full_unstemmed Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
title_sort epitaxial growth of iii-v nitrides based light emitting diodes by metal organic chemical vapor deposition
granting_institution Perpustakaan Hamzah Sendut
granting_department Pusat Penyelidikan Teknologi Nano
publishDate 2023
url http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf
_version_ 1818647387600584704

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