Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2023
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| 主题: | |
| 在线阅读: | http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf |
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