Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physi...
محفوظ في:
المؤلف الرئيسي: | |
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التنسيق: | أطروحة |
اللغة: | English |
منشور في: |
2008
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الموضوعات: | |
الوصول للمادة أونلاين: | http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf |
الوسوم: |
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my-usm-ep.95832017-05-31T05:06:40Z Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. 2008-08 Tan, Philip Beow Yew TK7800-8360 Electronics Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor. 2008-08 Thesis http://eprints.usm.my/9583/ http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Elektrik dan Elektronik |
institution |
Universiti Sains Malaysia |
collection |
USM Institutional Repository |
language |
English |
topic |
TK7800-8360 Electronics |
spellingShingle |
TK7800-8360 Electronics Tan, Philip Beow Yew Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
description |
Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron.
This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor.
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format |
Thesis |
qualification_name |
Doctor of Philosophy (PhD.) |
qualification_level |
Doctorate |
author |
Tan, Philip Beow Yew |
author_facet |
Tan, Philip Beow Yew |
author_sort |
Tan, Philip Beow Yew |
title |
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
title_short |
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
title_full |
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
title_fullStr |
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
title_full_unstemmed |
Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. |
title_sort |
compact modeling of deep submicron cmos transistor with shallow trench isolation mechanical stress effect [tk7871.99.m44 t161 2008 f rb]. |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Pengajian Kejuruteraan Elektrik dan Elektronik |
publishDate |
2008 |
url |
http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf |
_version_ |
1747819796721827840 |