Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].

Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physi...

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主要作者:	Tan, Philip Beow Yew
格式:	Thesis
语言:	English
出版:	2008
主题:	TK7800-8360 Electronics
在线阅读:	http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf
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id	my-usm-ep.9583
record_format	uketd_dc
spelling	my-usm-ep.95832017-05-31T05:06:40Z Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb]. 2008-08 Tan, Philip Beow Yew TK7800-8360 Electronics Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor. 2008-08 Thesis http://eprints.usm.my/9583/ http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Elektrik dan Elektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TK7800-8360 Electronics
spellingShingle	TK7800-8360 Electronics Tan, Philip Beow Yew Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
description	Thesis ini memperkenalkan satu model padat, dua model berasaskan empirikal dan satu model berasaskan fizikal untuk kesan tekanan mekanikal Pengasingan Peparit Cetek (STI) ke atas transistor CMOS di bawah submikron. This thesis introduces a compact model, two empirical-based models and a physical-based model of Shallow Trench Isolation (STI) mechanical stress effect on deep submicron CMOS transistor.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Tan, Philip Beow Yew
author_facet	Tan, Philip Beow Yew
author_sort	Tan, Philip Beow Yew
title	Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_short	Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_full	Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_fullStr	Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_full_unstemmed	Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
title_sort	compact modeling of deep submicron cmos transistor with shallow trench isolation mechanical stress effect [tk7871.99.m44 t161 2008 f rb].
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuruteraan Elektrik dan Elektronik
publishDate	2008
url	http://eprints.usm.my/9583/1/COMPACT_MODELING_OF_DEEP_SUBMICRON_CMOS_TRANSISTOR.pdf
_version_	1747819796721827840

Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].

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