The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].

Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of...

Full description

Saved in:
Bibliographic Details
Main Author: Lee,, Kang Hai
Format: Thesis
Language:English
Published: 2006
Subjects:
Online Access:http://eprints.usm.my/9830/1/THE_EFFECT_OF_IMPLANT_ANGLE_AND_RESIST_SHADOWING_IN_SUBMICRON_IMPLANT_TECHNOLOGY.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!
id my-usm-ep.9830
record_format uketd_dc
spelling my-usm-ep.98302017-03-22T02:23:54Z The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb]. 2006-07 Lee,, Kang Hai QC501-766 Electricity and magnetism Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of 90nm technology node and beyond, there are issues still need to be addressed at the lower technology nodes such as 0.13μm and 0.22μm. 2006-07 Thesis http://eprints.usm.my/9830/ http://eprints.usm.my/9830/1/THE_EFFECT_OF_IMPLANT_ANGLE_AND_RESIST_SHADOWING_IN_SUBMICRON_IMPLANT_TECHNOLOGY.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC501-766 Electricity and magnetism
spellingShingle QC501-766 Electricity and magnetism
Lee,, Kang Hai
The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
description Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of 90nm technology node and beyond, there are issues still need to be addressed at the lower technology nodes such as 0.13μm and 0.22μm.
format Thesis
qualification_level Master's degree
author Lee,, Kang Hai
author_facet Lee,, Kang Hai
author_sort Lee,, Kang Hai
title The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
title_short The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
title_full The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
title_fullStr The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
title_full_unstemmed The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology [QC702.7.I55 L478 2006 f rb].
title_sort effect of implant angle and resist shadowing in submicron implant technology [qc702.7.i55 l478 2006 f rb].
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2006
url http://eprints.usm.my/9830/1/THE_EFFECT_OF_IMPLANT_ANGLE_AND_RESIST_SHADOWING_IN_SUBMICRON_IMPLANT_TECHNOLOGY.pdf
_version_ 1747819817939763200