Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].

Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and...

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Main Author: Ali Al-Obaidi, Nihad Khalaf
Format: Thesis
Language:English
Published: 2008
Subjects:
Online Access:http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf
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spelling my-usm-ep.98932017-03-22T02:23:47Z Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb]. 2008-06 Ali Al-Obaidi, Nihad Khalaf TA401-492 Materials of engineering and construction. Mechanics of materials Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed. 2008-06 Thesis http://eprints.usm.my/9893/ http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TA401-492 Materials of engineering and construction
Mechanics of materials
spellingShingle TA401-492 Materials of engineering and construction
Mechanics of materials
Ali Al-Obaidi, Nihad Khalaf
Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
description Bahan hablur nano berjalur tenaga terus dan tak terus (poros silicon, PS dan poros GaAs, π-GaAs) telah difabrikasi dan ciri-ciri optic mereka telah dikaji dengan mendalam. Indirect and direct band gap nanocrystalline materials (porous silicon, PS and porous GaAs, π-GaAs) have been fabricated and their optical properties were extensively studied. In this work, two approaches to manufacture these materials are employed.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Ali Al-Obaidi, Nihad Khalaf
author_facet Ali Al-Obaidi, Nihad Khalaf
author_sort Ali Al-Obaidi, Nihad Khalaf
title Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
title_short Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
title_full Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
title_fullStr Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
title_full_unstemmed Fabrication And Characterization Of Electrochemically Formed Nanocrystalline Porous Si And Gaas [TA418.9.N35 B152 2008 f rb].
title_sort fabrication and characterization of electrochemically formed nanocrystalline porous si and gaas [ta418.9.n35 b152 2008 f rb].
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2008
url http://eprints.usm.my/9893/1/FABRICATION_AND_CHARACTERIZATION_OF.pdf
_version_ 1747819821369655296