Preparation & characterization of electrophoretically deposited BN film for semiconductor package

Boron Nitride (BN) is used in various applications such as in lubrication, as a releasing agent and also as a thermosetting insulator material and thermal enhancer because of its advanced material properties. Electrophoretic deposition (EPD) method is a new method for semiconductor industries and it...

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Main Author:	Narayanasami, Jayaganasan
Format:	Thesis
Language:	English English
Published:	2017
Subjects:	T Technology (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/20612/1/Preparation%20%26%20Characterization%20Of%20Electrophoretically%20Deposited%20BN%20Film%20For%20Semiconductor%20Package.pdf http://eprints.utem.edu.my/id/eprint/20612/2/Preparation%20%26%20characterization%20of%20electrophoretically%20deposited%20BN%20film%20for%20semiconductor%20package.pdf
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id	my-utem-ep.20612
record_format	uketd_dc
institution	Universiti Teknikal Malaysia Melaka
collection	UTeM Repository
language	English English
advisor	Lau Kok, Tee
topic	T Technology (General) T Technology (General)
spellingShingle	T Technology (General) T Technology (General) Narayanasami, Jayaganasan Preparation & characterization of electrophoretically deposited BN film for semiconductor package
description	Boron Nitride (BN) is used in various applications such as in lubrication, as a releasing agent and also as a thermosetting insulator material and thermal enhancer because of its advanced material properties. Electrophoretic deposition (EPD) method is a new method for semiconductor industries and it has grown in the interest on making use of BN as a thermal interface material and electrical isolation in Transistor Outline (TO) packages. Hexagonal Boron Nitride (h-BN) stability in EPD suspension is essential to produce repeatability and reproducibility in the result of the deposition. However, h-BN particle has less functional group on its side wall to create bonding with the polymer matrix. In order to increase functional groups on its side wall, NaOH surface treatment which has been established by other researchers was performed. The purpose of this study is to prepare and characterise of the h-BN particles in EPD suspension using different types of suspension mediums and binders. The particle size characterization and Field-Emission Scanning Electron Microscopy (FESEM) on the as-received h-BN particle indicates that particle sizes were less than 1 μm but are in agglomerated forms in the De-ionized (DI) water suspension. Sedimentation test method of h-BN particles in four dispersion media (deionized water, Acetic acid solution, Sulphamic Acid & Ammonia) and using different binder (Polyethylene Glycol (PEG), Silane Coupling Agent, Polycationic 1 (PC 1), Polycationic 2 (PC 2). The result showed a combination of deionized water and PC 2 produced the highest stability for h-BN dispersion. Sedimentation test and zeta potential method were used to determine the optimum concentration of PC 2 addition in a h-BN suspension. EPD of h-BN was performed on TO package using different levels of PC 2 concentration (i.e. 0.2 – 1.0 wt%). Characterization of the EPD coating were performed in terms of thickness, microstructure analysis on surface and micrograph from FESEM, and surface roughness. The optimum concentration of PC 2 in order to achieve the highest h-BN stability was in the range of 0.3 – 0.4 wt%, with a corresponding deposition thickness of 8 μm. The obtained thickness was the highest among other samples, and had surface roughness of 570 nm. Critical factors that affected the deposition for h-BN EPD process were suspension ionic conductivity and excess PC 2 concentration. High conductivity and excess PC 2 concentration caused electric double layer of h-BN particles to be compressed thus resulting in a low deposition yield. Therefore, it is recommended that future works use ultra-pure DI water and excess binder of h-BN suspension need to be removed by centrifugal washing before undergoes EPD to reduce conductivity of h-BN suspension. Besides it also helps to achieve a high deposition thickness of h-BN for thermal conductive and electrical isolation application.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Narayanasami, Jayaganasan
author_facet	Narayanasami, Jayaganasan
author_sort	Narayanasami, Jayaganasan
title	Preparation & characterization of electrophoretically deposited BN film for semiconductor package
title_short	Preparation & characterization of electrophoretically deposited BN film for semiconductor package
title_full	Preparation & characterization of electrophoretically deposited BN film for semiconductor package
title_fullStr	Preparation & characterization of electrophoretically deposited BN film for semiconductor package
title_full_unstemmed	Preparation & characterization of electrophoretically deposited BN film for semiconductor package
title_sort	preparation & characterization of electrophoretically deposited bn film for semiconductor package
granting_institution	Universiti Teknikal Malaysia Melaka
granting_department	Faculty Of Manufacturing Engineering
publishDate	2017
url	http://eprints.utem.edu.my/id/eprint/20612/1/Preparation%20%26%20Characterization%20Of%20Electrophoretically%20Deposited%20BN%20Film%20For%20Semiconductor%20Package.pdf http://eprints.utem.edu.my/id/eprint/20612/2/Preparation%20%26%20characterization%20of%20electrophoretically%20deposited%20BN%20film%20for%20semiconductor%20package.pdf
_version_	1776103110154911744
spelling	my-utem-ep.206122022-11-22T11:52:08Z Preparation & characterization of electrophoretically deposited BN film for semiconductor package 2017 Narayanasami, Jayaganasan T Technology (General) TA Engineering (General). Civil engineering (General) Boron Nitride (BN) is used in various applications such as in lubrication, as a releasing agent and also as a thermosetting insulator material and thermal enhancer because of its advanced material properties. Electrophoretic deposition (EPD) method is a new method for semiconductor industries and it has grown in the interest on making use of BN as a thermal interface material and electrical isolation in Transistor Outline (TO) packages. Hexagonal Boron Nitride (h-BN) stability in EPD suspension is essential to produce repeatability and reproducibility in the result of the deposition. However, h-BN particle has less functional group on its side wall to create bonding with the polymer matrix. In order to increase functional groups on its side wall, NaOH surface treatment which has been established by other researchers was performed. The purpose of this study is to prepare and characterise of the h-BN particles in EPD suspension using different types of suspension mediums and binders. The particle size characterization and Field-Emission Scanning Electron Microscopy (FESEM) on the as-received h-BN particle indicates that particle sizes were less than 1 μm but are in agglomerated forms in the De-ionized (DI) water suspension. Sedimentation test method of h-BN particles in four dispersion media (deionized water, Acetic acid solution, Sulphamic Acid & Ammonia) and using different binder (Polyethylene Glycol (PEG), Silane Coupling Agent, Polycationic 1 (PC 1), Polycationic 2 (PC 2). The result showed a combination of deionized water and PC 2 produced the highest stability for h-BN dispersion. Sedimentation test and zeta potential method were used to determine the optimum concentration of PC 2 addition in a h-BN suspension. EPD of h-BN was performed on TO package using different levels of PC 2 concentration (i.e. 0.2 – 1.0 wt%). Characterization of the EPD coating were performed in terms of thickness, microstructure analysis on surface and micrograph from FESEM, and surface roughness. The optimum concentration of PC 2 in order to achieve the highest h-BN stability was in the range of 0.3 – 0.4 wt%, with a corresponding deposition thickness of 8 μm. The obtained thickness was the highest among other samples, and had surface roughness of 570 nm. Critical factors that affected the deposition for h-BN EPD process were suspension ionic conductivity and excess PC 2 concentration. High conductivity and excess PC 2 concentration caused electric double layer of h-BN particles to be compressed thus resulting in a low deposition yield. Therefore, it is recommended that future works use ultra-pure DI water and excess binder of h-BN suspension need to be removed by centrifugal washing before undergoes EPD to reduce conductivity of h-BN suspension. Besides it also helps to achieve a high deposition thickness of h-BN for thermal conductive and electrical isolation application. 2017 Thesis http://eprints.utem.edu.my/id/eprint/20612/ http://eprints.utem.edu.my/id/eprint/20612/1/Preparation%20%26%20Characterization%20Of%20Electrophoretically%20Deposited%20BN%20Film%20For%20Semiconductor%20Package.pdf text en public http://eprints.utem.edu.my/id/eprint/20612/2/Preparation%20%26%20characterization%20of%20electrophoretically%20deposited%20BN%20film%20for%20semiconductor%20package.pdf text en validuser https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=105978 mphil masters Universiti Teknikal Malaysia Melaka Faculty Of Manufacturing Engineering Lau Kok, Tee 1. Abudalazez, A., Kasim, S.R., Ariffin, A.B., and Ahmad, Z.A., 2012. Effect of the Solid Concentration in the Suspension on Electrophoretic Deposition (EPD) Coating Parameters. In International Journal of Engineering Research in Africa, 8, pp.47 - 54. 2. Ahmad, Z., 2012. Polymer Dielectric Materials, s.l.: Intech. 3. Ahn, K., Kim, K., and Kim, J., 2015. Fabrication of Surface-Treated BN/ETDS Composites for Enhanced Thermal and Mechanical Properties. Ceramics International, 41(8), pp. 9488 – 9495. 4. Al-Hamdani, Y. S., Ma, M., Alfè, D., Von Lilienfeld, O. A., and Michaelides, A., 2015. Communication: Water on Hexagonal Boron Nitride from Diffusion Monte Carlo. The Journal of Chemical Physics, 142(18). 5. Allen, E. and Smith, P., 2001. A review of particle agglomeration. Surfaces, 85(86), p.87. 6. Aziz, S. A. A., Amirnordin, S. H., Rahman, H. A., Abdullah, H. Z., and Taib, H., 2013. Effect of Zeta Potential of Stanum Oxide (SnO2) On Electrophoretic Deposition (EPD) on Porous Alumina. In Advanced Materials Research, 795, pp.334 - 337. 7. Bakshi, U. and Godse, A., 2008. Electronics Devices and Linear Circuits. 1 ed. Pune: Technical Publications. 8. Berger, L. I., 2006. Dielectric Strength of Insulating Materials. Carbon, 1, pp.2. 9. Besra, L. and Liu, M., 2007. A review on fundamentals and applications of electrophoretic deposition (EPD). Progress in materials science, 52(1), pp.1-61. 10. Bhattacharjee, S., 2016. DLS and Zeta Potential – What They Are and What They Are Not, Journal of Controlled Release, 235, pp.337 – 351. 11. Bhattacharya, A., Bhattacharya, S. and Das, G.P., 2012. Band gap engineering by functionalization of BN sheet. Physical Review B, 85(3), p.035415. 12. Blake, C. and Bull, C., 2001. IGBT or MOSFET: choose wisely. International Rectifier. 13. Boccaccini, A. R., Keim, S., Ma, R., Li, Y., and Zhitomirsky, I., 2010. Electrophoretic Deposition of Biomaterials. Journal of the Royal Society Interface, 7(5), S581-S613. 14. Bose, B. K., 1992. Evaluation of Modern Power Semiconductor Devices and Future Trends of Converters, IEEE Transactions on Industry Application, 28(2), pp. 403 – 413. 15. Boulogne, F., Giorgiutti-Dauphiné, F., and Pauchard, L., 2013. How to Reduce the Crack Density in Drying Colloidal. Material Oil & Gas Science and Technology – Rev. IFP Energies nouvelles, 69 (3), pp.397 – 404. 16. Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Katsnelson, M. I., Eaves, L., Morozov, S. V., Mayorov, A. S., Peres, N. M. R., Neto, A. H. C., Leist, J., Geim, A. K., Ponomarenko, L. A., and Novoselov, K. S., 2012. Atomically Thin Boron Nitride: A Tunnelling Barrier for Graphene Devices. Nano Letter., 12 (3), pp. 1707 – 1710. 17. Brucchi, F., and Peinhopf, W., 2012. Electrical safety and isolation in high voltage discrete component applications and design hints. Infineon Technologies AG, V1.0. 18. Chubarov, M., Pedersen, H.,.Högberg, H., Filippov, S., Engelbrecht, J. A. A., O'connel, J., and Henry, A., 2014. Boron Nitride: A New Photonic Material. Physica B: Condensed Matter, 439, pp. 29 – 34. 19. Chung, Y., Park, H., Cho, S.B., Yoon, Y. S. and Dong-Joo, K. I. M., 2014, April. Effect of Processing Parameters on Electrophoretically Deposited ZnO Nanoparticles on Conductive Fabrics. In Meeting Abstracts, The Electrochemical Society. No. 8, pp. 514-514. 20. DigChip.Com, 2016. MOSFET N-CH 1500V 7A TO-247. [online] 21. Available at: 22. https://www.digchip.com/datasheets/8790838-stw12n150k5-mosfet-n-ch-1500v.html [Accessed on 20 Feb 2016] 23. Dor, S., Rühle, S., Ofir, A., Adler, M., Grinis, L., and Zaban, A., 2009. The Influence of Suspension Composition and Deposition Mode on the Electrophoretic Deposition of TiO2 Nanoparticle Agglomerates. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 342(1), pp.70 - 75. 24. El-Kalliny, A. S., Ahmed, S. F., Rietveld, L. C., and Appel, P. W., 2014. Immobilized Photocatalyst on Stainless Steel Woven Meshes Assuring Efficient Light Distribution in a Solar Reactor. Drinking Water Engineering and Science, 7(1), pp. 41-52. 25. Ferrari, B., and Moreno, R., 1997. Electrophoretic Deposition of Aqueous Alumina Slips, Journal of the European Ceramic Society 17, pp.549 – 556. 26. Ferrari, B., and Moreno, R., 1996. The Conductivity of Aqueous Al2O3, Slips for Electrophoretic Deposition, Materials Letters, 28, pp.353 - 355. 27. Francis, P. E., 2004. Cathodic protection in practice. National Physical Laboratory, Teddington. 28. Fuji-Electric, No date. Chapter 3: Heat dissipation design method. [online] 29. Available at: 30. https://www.fujielectric.com/products/semiconductor/model/igbt/application/box/doc/pdf/igbt_automotive/igbt_automotive_03_E.pdf [Accessed on 10 April 2015] 31. Gilmore, T., and Sladky, R. G., 2001. Ratings of Semiconductors for AC Drives. Industry Applications, IEEE Transactions, 37(2), pp.434 - 441. 32. Giraud, P., 2012. Study of the Electronic Structure of Hexagonal Boron Nitride on Metal Substrates (Doctoral dissertation, Master Thesis, Université des Sciences et Technologies Lille 1). 33. Goodfellow, 2015. All The Materials You Need For Scientific And Industrial Research And Manufacturing. [online] 34. Available at: 35. Http://Www.Goodfellow.Com/Catalogue/Gfcat2c.Php?Ewd_Token=Sqsp4nvwyTa3nclczkP2z7gnh5apyy&N=4x2ykK34y0qAqvkumjahss3kmbh2sz&Ewd_Urlno=Gfcat26&Type=60&Prop=4. [Accessed On 25 Feb 2016] 36. Hallouche, A., and Tilmatne, A., 2007. Thermal Impact on the Power Device Behaviour: Application on the IGBT. Advances in Electrical and Computer Engineering, 7 (14) 1(27), pp.9 – 12. 37. Ikonen, M., 2012. Power Cycling Lifetime Estimation Of IGBT Power Modules Based On Chip Temperature Modeling. (Doctoral Dissertation, Lappeenranta University of Technology) 38. Jal, P. K., Patel, S., and Mishra, B. K., 2004. Chemical Modification of Silica Surface by Immobilization of Functional Groups for Extractive Concentration of Metal Ions. Talanta, 62 (5), pp. 1005–1028. 39. Jin, W., Zhang, W., Gao, Y., Liang, G., Gu, A., and Yuan, L., 2013. Surface Functionalization of Hexagonal Boron Nitride and Its Effect on the Structure and Performance of Composites. Applied Surface Science, 270, pp. 561-571. 40. Kim, K. K., Hsu, A., Jia, X., Kim, S. M., Shi, Y., Dresselhaus, M., and Kong, J., 2012. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices. Acs Nano, 6(10), pp.8583 - 8590. 41. Kim, K., and Kim, J., 2014. Fabrication of Thermally Conductive Composite with Surface Modified Boron Nitride by Epoxy Wetting Method. Ceramics International, 40(4), pp. 5181-5189. 42. Kim, K., Kim, M., Hwang, Y., and Kim, J., 2014. Chemically Modified Boron Nitride-Epoxy Terminated Dimethylsiloxane Composite For Improving The Thermal Conductivity. Ceramics International, 40(1), pp. 2047-2056. 43. Kochetov, R., Andritsch, T., Lafont, U., Morshuis, P. H. F., Picken, S. J., and Smit, J. J., 2009. Preparation and Dielectric Properties of Epoxy-BN and Epoxy-AlN Nanocomposites. Institute of Electrical and Electronics Engineers (IEEE) Electrical Insulation Conference, Quebec, Canada, 31st May – 3th June, 2009, pp. 397-400. 44. Lam, P. K., 1999. Phase Diagram, Cluster Stability, and Growth Mechanism of Boron Nitride. International Conference on High Pressure Science and Technology (Airapt-17), Honolulu, Hawaii, July 25-30, 1999. 45. Lane, J. B. S., No Date. Pharmacopeial Forum, Volume No.29 (4), Page 1313. [online] 46. Available at: 47. http://www.newdruginfo.com/pharmacopeia/usp28/v28230/usp28nf23s0_m66430.htm [Accessed on 20 August 2015] 48. Lang, G. A., Fehder, B. J., and Williams, W. D., 1970. Thermal Fatigue in Silicon Power Transistors. Electron Devices, IEEE Transactions On, 17(9), pp. 787-793. 49. Lau, K. T., and Sorrell, C. C., 2011. Electrophoretic Mobilities of Dissolved Polyelectrolyte Charging Agent and Suspended Non-Colloidal Titanium during Electrophoretic Deposition. Materials Science and Engineering, B 176, pp.369 – 381. 50. Lau, K. T., and Sorrell, C. C., 2013. Effect of Cationic Charging Agent on the Bonding Strength of Coarse Titanium Particles Deposited By Electrophoretic Deposition. International Journal of the Institute of Materials Malaysia (IJIMM), 1, pp.1 – 15. 51. Lau, K. T., and Sorrell, C. C., 2013. Effect of Charging Agents on Electrophoretic Deposition of Titanium Particles. Journal of the Australian Ceramic Society, 49(2), pp.104 – 112. 52. Lee, J., Ha, T. J., Parrish, K. N., Chowdhury, S. F., Tao, L., Dodabalapur, A., and Akinwande, D., 2013. High-Performance Current Saturating Graphene Field-Effect Transistor with Hexagonal Boron Nitride Dielectric on Flexible Polymeric Substrates. Electron Device Letters, IEEE, 34(2), pp. 172-174. 53. Li, G., and O’brien, W., 2001. Boron Nitride - Motivation and Applications. Elect. Eng., Univ. Notre Dame. 54. Luo, Q.W., Li, Y.N., Li, F.H., and Fan, Z.G., 2014. Preparation of Yba2Cu3O7 Superconducting Thick Film on Ni-W Tapes via Electrophoretic Deposition. Transactions of Nonferrous Metals Society of China, 24(1), pp.120 - 125. 55. Ma, J., and Cheng, W., 2002. Deposition and Packing Study of Sub-Micron PZT Ceramics Using Electrophoretic Deposition. Materials Letters, 56 (5), pp. 721– 727. 56. Mohanty, G., Besra, L., Bhattacharjee, S., and Singh, B.P., 2008. Optimization of Electrophoretic Deposition of Alumina onto Steel Substrates from Its Suspension in Iso-Propanol Using Statistical Design of Experiments. Materials Research Bulletin, 43(7), pp.1814 - 1828. 57. Mohseni, E., Zalnezhad, E., and Bushroa, A.R., 2014. Comparative Investigation on the Adhesion of Hydroxyapatite Coating on Ti–6Al–4V Implant: A Review Paper. International Journal of Adhesion and Adhesives, 48, pp.238 - 257. 58. Moreno, R., and Ferrari, B., 2000. Effect of the Slurry Properties on the Homogeneity of Alumina Deposits Obtained By Aqueous Electrophoretic Deposition. Materials Research Bulletin 35, pp. 887 – 897. 59. Nazarov, A.S., Demin, V.N., Grayfer, E.D., Bulavchenko, A.I., Arymbaeva, A.T., Shin, H.J., Choi, J.Y. and Fedorov, V.E., 2012. Functionalization And Dispersion Of Hexagonal Boron Nitride (H-BN) Nanosheets Treated With Inorganic Reagents. Chemistry-an Asian Journal, (7), pp. 554-60. 60. Parida, G., 2010. Synthesis of Ultrafine Dispersed Coating by Electrodeposition. (Doctoral Dissertation, National Institute of Technology Rourkela). 61. Sarkar, A., and Daniels-Race, T., 2013. Electrophoretic Deposition of Carbon Nanotubes on 3-Amino-Propyl-Triethoxysilane (APTES) Surface Functionalized Silicon Substrates. Nanomaterials , 3 (2), pp.272 - 288. 62. Sato, N., Kawachi, M., Noto, K., Yoshimoto, N., and Yoshizawa, M., 2001. Effect of Particle Size Reduction on Crack Formation in Electrophoretically Deposited YBCO Films. Physica C: Superconductivity, 357-360 (2), pp.1019 - 1022. 63. Sim, L., Ramanan, S. R., Ismail, H., Seetharamu, K. N., and Goh, T. J., 2005. Thermal Characterization of Al2O3 and ZnO Reinforced Silicone Rubber as Thermal Pads for Heat Dissipation Purposes. Thermochimica Acta, 430(1-2), pp. 155-165. 64. Schelling, P.K., Shi, L., and Goodson, K.E, 2005. Managing Heat for Electronics, Materialstoday, June Edition, Elsevier, pp.30-35. 65. Steinborn, C., Herrmann, M., Keitel, U., Schönecker, A., Räthel, J., Rafaja, D., and Eichler, J., 2013. Correlation between Microstructure and Electrical Resistivity of Hexagonal Boron Nitride Ceramics. Journal of the European Ceramic Society, 33(6), pp. 1225–1235. 66. Spann, T., Ostmann, H. and Choi, K.R., IXYS Corporation, 2013. Electrically isolated power semiconductor package with optimized layout. U.S. Patent 8,455,987. 67. Taib, H., 2009. Synthesis and Electrophoretic Deposition of Tin Oxide (SnO2). (Doctoral Dissertation, University of New South Wales). 68. Tanaka, T., Kozako, M., and Okamoto, K., 2012. Toward High Thermal Conductivity Nano Micro Epoxy Composites with Sufficient Endurance Voltage. Journal of International Council on Electrical Engineering, 2(1), pp. 90 - 98. 69. Tang, F., Uchikoshi, T., Ozawa, K., and Sakka, Y., 2002. Electrophoretic Deposition of Aqueous Nano – Al2O3 Suspensions, Materials Research Bulletin, 37, pp.653 - 660. 70. Vilarinho, P.M., Fu, Z., Wu, A., and Kingon, A.I., 2013. Critical Role of Suspension Media in Electrophoretic Deposition: The Example of Low Loss Dielectric BaNd2Ti5O14 Thick Films. Journal Physical Chemistry B, 117(6), pp. 1670 – 1679. 71. Zarbov, M., Schuster, I., and Gal-Or, L., 2004. Methodology for Selection of Charging Agents for Electrophoretic Deposition of Ceramic Particles. Journal of Materials Science, 39 (3), pp.813 – 817. 72. Zhigadlo N.D., 2014. Crystal Growth of Hexagonal Boron Nitride (HBN) from Mg-B-N Solvent System under High Pressure. Journal of Crystal Growth, 402, pp.308 - 311. 73. Zhitomirsky, I., 2002. Cathodic Electrodeposition of Ceramic and Organoceramic Materials. Fundamental Aspects. Advances in Colloid and Interface Science, 97 (1-3), pp. 279 - 317. 74. Zhou, H., Zhu, J., Liu, Z., Yan, Z., Fan, X., Lin, J., Wang, G., Yan, Q., Yu, T., Ajayan, P.M., and Tour, J.M., 2014. High Thermal Conductivity of Suspended Few-Layer Hexagonal Boron Nitride Sheets. Nano Research, 7(8), pp. 1232-1240.

Preparation & characterization of electrophoretically deposited BN film for semiconductor package

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