Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ

Thermal dissipation of a microelectronic device is a topic of interest amongst the researchers because poor thermal dissipation may cause reliability problem during customer’s application. Researchers found that Leadframe, Solder Paste Material, Chip Metalization and Die Attach process contributed t...

Full description

Saved in:

Bibliographic Details
Main Author:	Ong, Ming Chung
Format:	Thesis
Language:	English English
Published:	2017
Subjects:	T Technology (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/20621/1/Determination%20Of%20Electrical%20Measurement%20To%20Detect%20Poor%20Thermal%20Dissipation%20Devices%20Using%20TRIZ.pdf http://eprints.utem.edu.my/id/eprint/20621/2/Determination%20of%20electrical%20measurement%20to%20detect%20poor%20thermal%20dissipation%20devices%20using%20TRIZ.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-utem-ep.20621
record_format	uketd_dc
institution	Universiti Teknikal Malaysia Melaka
collection	UTeM Repository
language	English English
advisor	Abd Rahman, Md Nizam
topic	T Technology (General)
spellingShingle	T Technology (General) Ong, Ming Chung Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
description	Thermal dissipation of a microelectronic device is a topic of interest amongst the researchers because poor thermal dissipation may cause reliability problem during customer’s application. Researchers found that Leadframe, Solder Paste Material, Chip Metalization and Die Attach process contributed to poor thermal dissipation of a device. The existence of air gap inside the package which was created during Die Attach process was found causing poor thermal dissipation for the device. Air gap blocks the heat dissipation path of the device, causing the heat to be entrapped inside the device which leads to poor reliability performance. X-Ray and Scanning Acoustic Microscopy (SAM) are widely used to identify air gap within microelectronic devices. However, these methods are only able to identify the poor thermal dissipation devices if it is related to the presence of air gap. Poor thermal dissipation can also caused by some weaknesses inherited from wafer processes. An alternative way to identify poor thermal dissipation devices is by using electrical measurement which has better advantages compared to X-Ray and SAM in terms of sampling size, time and effort. However, the challenge is on the effectiveness of the electrical measurement to identify poor thermal dissipation device because using low energy, the measurement may not be sensitive enough; but if using high energy, the device may become destructive. This is a typical contradiction found in this Inventive Problem which best solved by using “The Theory of Inventive Problem”-TRIZ because TRIZ deals with “Contradiction”. Moreover, TRIZ stimulated new idea in solving the effectiveness problem in a structured approach. In this thesis, TRIZ proposed to use Parameter Change (PC) and Periodic Action (PA) as the solutions principle to increase the effectiveness of identifying poor thermal dissipation devices. Principle PC concluded that using V voltage, Y timing with 13.2Ampere as the input energy able to screen out device with poor thermal dissipation with 100% success rate; while Principle PA suggested that using input Energy of 900mJ able to achieve the same result. Experiment and data collection confirmed that TRIZ principle PC and PA are able to identify poor thermal dissipation in microelectronic device even though the device did not have air gaps. Such identification was not possible through traditional approaches, such as X-Ray or SAM.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Ong, Ming Chung
author_facet	Ong, Ming Chung
author_sort	Ong, Ming Chung
title	Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
title_short	Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
title_full	Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
title_fullStr	Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
title_full_unstemmed	Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
title_sort	determination of electrical measurement to detect poor thermal dissipation devices using triz
granting_institution	Universiti Teknikal Malaysia Melaka
granting_department	Faculty Of Manufacturing Engineering
publishDate	2017
url	http://eprints.utem.edu.my/id/eprint/20621/1/Determination%20Of%20Electrical%20Measurement%20To%20Detect%20Poor%20Thermal%20Dissipation%20Devices%20Using%20TRIZ.pdf http://eprints.utem.edu.my/id/eprint/20621/2/Determination%20of%20electrical%20measurement%20to%20detect%20poor%20thermal%20dissipation%20devices%20using%20TRIZ.pdf
_version_	1776103110404472832
spelling	my-utem-ep.206212022-12-07T15:12:54Z Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ 2017 Ong, Ming Chung T Technology (General) Thermal dissipation of a microelectronic device is a topic of interest amongst the researchers because poor thermal dissipation may cause reliability problem during customer’s application. Researchers found that Leadframe, Solder Paste Material, Chip Metalization and Die Attach process contributed to poor thermal dissipation of a device. The existence of air gap inside the package which was created during Die Attach process was found causing poor thermal dissipation for the device. Air gap blocks the heat dissipation path of the device, causing the heat to be entrapped inside the device which leads to poor reliability performance. X-Ray and Scanning Acoustic Microscopy (SAM) are widely used to identify air gap within microelectronic devices. However, these methods are only able to identify the poor thermal dissipation devices if it is related to the presence of air gap. Poor thermal dissipation can also caused by some weaknesses inherited from wafer processes. An alternative way to identify poor thermal dissipation devices is by using electrical measurement which has better advantages compared to X-Ray and SAM in terms of sampling size, time and effort. However, the challenge is on the effectiveness of the electrical measurement to identify poor thermal dissipation device because using low energy, the measurement may not be sensitive enough; but if using high energy, the device may become destructive. This is a typical contradiction found in this Inventive Problem which best solved by using “The Theory of Inventive Problem”-TRIZ because TRIZ deals with “Contradiction”. Moreover, TRIZ stimulated new idea in solving the effectiveness problem in a structured approach. In this thesis, TRIZ proposed to use Parameter Change (PC) and Periodic Action (PA) as the solutions principle to increase the effectiveness of identifying poor thermal dissipation devices. Principle PC concluded that using V voltage, Y timing with 13.2Ampere as the input energy able to screen out device with poor thermal dissipation with 100% success rate; while Principle PA suggested that using input Energy of 900mJ able to achieve the same result. Experiment and data collection confirmed that TRIZ principle PC and PA are able to identify poor thermal dissipation in microelectronic device even though the device did not have air gaps. Such identification was not possible through traditional approaches, such as X-Ray or SAM. 2017 Thesis http://eprints.utem.edu.my/id/eprint/20621/ http://eprints.utem.edu.my/id/eprint/20621/1/Determination%20Of%20Electrical%20Measurement%20To%20Detect%20Poor%20Thermal%20Dissipation%20Devices%20Using%20TRIZ.pdf text en public http://eprints.utem.edu.my/id/eprint/20621/2/Determination%20of%20electrical%20measurement%20to%20detect%20poor%20thermal%20dissipation%20devices%20using%20TRIZ.pdf text en validuser https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=104240 mphil masters Universiti Teknikal Malaysia Melaka Faculty Of Manufacturing Engineering Abd Rahman, Md Nizam 1. Abarada, F. B., Lakatos, E., Profirescu, M. D., Amza, C., Manea, E., and Dumbavescu, N., 2004. Mosfet Process Optimization And Characteristics Extraction. IEEE, pp. 319-322. 2. Awada, A., Wegmann, B., Viering, I., and Klein, A., 2011. Optimizing the Radio Network Parameters of the Long Term Evolution System Using Taguchi’s Method. Transactions On Vehicular Technology, IEEE, 60(8), pp. 3825–3839. 3. Bahman, J.E., Abbas, S., Hossein, H.S., and Hamedanian, A., 2013. Defect Detection And Preventive Maintenance Prioritization of Distribution Cubicles by Infrared Statistical Image Processing. 22nd International Conference on Electricity Distribution, Stockholm, 10 -13 June 2013. 4. Brent, G., Daniel, T., and Howdy, G., 2001. The Encyclopedia of Imaging Science and Technology, Berkeley: John Wiley and Sons. 5. Chang, P., Hsiao, H. L., Cheng, C. H., Chu, S. I., Tai, H. W., Shieh, Y. Y., and Sun, C. Y., 2013. Investigation of Fluorine Induced Probe Marker Discoloration. Electronics Packaging Technology, IEEE, 23, 139–142. 6. Chen, L., Paulasto-krockel, M., Frohler, U., Schweitzer, D., and Pape, H., 2008. Thermal Impact of Randomly Distributed Solder Voids on Rth-JC of MOSFETs. Electronics Systemintegration Technology, IEEE, pp 237-244. 7. Chou, J., 2014. An ideation method for generating new product ideas using TRIZ, concept mapping, and fuzzy linguistic evaluation techniques. Advanced Engineering Informatics, 28, pp. 441–454. 8. Ekmekci, I., and Koksal, M., 2015. Triz Methodology and an Application Example for Product Development. Procedia - Social and Behavioral Sciences, 195, pp. 2689–2698. 9. Florian, D, Köck, H, Plankensteiner, K, and Glavanovics, M., 2012. Infrared image system for microelectronic devices: Auto focus and image correlation techniques. Imaging Systems and Techniques, IEEE, pp. 285-290. 10. Gary, S.M., and Costas, J.S., 2006. Fundamentals of Semiconductors Manufacturing and Process Control, pp 79. New Jersey: John Wiley & Sons, Inc. 11. Goran, S.M., Chen, Y.W., and Chin, C. L, 1990. Void Free Bonding of Large Silicon Dice using Gold-Tin Alloys. Transaction of Component, Hybrids, and Manufacturing Technology, IEEE, Vol. 13, No.4, 1128-1134. 12. Iizuka, T., Zhou, Y., Maekawa, T., Tanaka, T., and Tatsumi, K., 2014. Surface Analysis of Epoxy Nanocomposite Insulator Materials Eroded by Partial Discharge. Electrical Insulation and Dielectric Phenomena, IEEE, (5), pp.703–706. 13. Jiang, P., Zhai, J., Chen, Z., and Tan, R., 2009. The Patent Design Around Method Based on TRIZ. IEEM, IEEE, (8622), pp. 1067–1071. 14. Kaplin, V. V, 2015. Asymmetry in generation of near-surface X-rays by 33 MeV electrons at grazing interaction with a thin Si plate in magnetic field. Nuclear Inst. And Methods in Physics Research, B, 355(2015), pp. 257–260. 15. Katsis, D. C., and Daniel, J., 2006. A Thermal, Mechanical, and Electrical Study of Voiding in the Solder Die-Attach of Power MOSFETs. Component and Technologies, IEEE, 29(1), pp. 127–136. 16. Kim, J., Kim, J., Lee, Y., Lim, W., and Moon, I., 2009. Application of TRIZ creativity intensification approach to chemical process safety. Journal of Loss Prevention in the Process Industries, 22(6), pp. 1039–1043. 17. Kim, M., and Nishikawa, H., 2014. Silver nanoporous sheet for solid-state die attach in power device packaging. Scripta Materialia, 92(2015), pp. 43–46. 18. Kundu, B, White, K.P, and Mastrangelo, C., 2002. Defect clustering and classification for semiconductor devices, Circuits and Systems, MWSCAS-2002. The 2002 45th Midwest Symposium on, 2002 vol 2, pp.561-564. 19. Lau, D. K. 2004. The Role of TRIZ as an Inventive Tool in Technology Development and Integration in China. International Conference on the Business Of Electronic Product Reliability and Liability, IEEE, pp. 157-161. 20. Lee, C. K. M., and Tai, J. E., 2014. Enabling Green Design with TRIZ, ICMIT, IEEE, pp.508–513. 21. Lee, C. C., and Chien, D. H., 1997. A Thermally Enhanced Plastic Package with Indented Leadframe, Electonic Components and Technology, IEEE, pp. 338-342. 22. Lee, M. W., Jung, W. K., Sohn, E. S., Lee, J. Y., Hwang, C. H., and Lee, C. H., 2008. A Study on the Rheological Characterization and Flow Modeling of Molded Underfill(MUF ) for Optimized Void Elimination Design. Electronic Components and Technology, IEEE, pp. 382–388. 23. Li, X., Chen, X., and Lu, G., 2010. Effect of Die-Attach Material on Performance and Reliability of High-Power Light-Emitting Diode Modules, Electronics Components and Technology Conference, IEEE, pp. 1344–1346. 24. Li, W.Q., Chen, H.B., Han, J.L., Xue, K., Wong. F., Ivan. S., Cheng, G.X., and Wu. J.S., 2012. Effects of Copper Plating Thickness of NilFe Alloy Leadframe on the Thermal Performance of Small Outline Transistor (SOT) Packages. Electronic Packaging Technology and High Density Packaging, IEEE, pp. 385–388. 25. Liu, Y.M., Wu, C.L., Liu, Y., Kinzer, D., Jeon, and O.S, 2010. Modeling for Defects Impact On Electrical Performance of Power Packages. Electronic Components and Technology Conference(ECTC), IEEE, pp. 403-410. 26. Lv, C., Zhang, M., and Wang, M., 2013. Application Research of TRIZ in Maintainability Design. Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), IEEE, pp.1971–1975. 27. Manikam, V. R., Razak, K. A., and Cheong, K. Y., 2013. Microelectronics Reliability of sintered Ag 80 – Al 20 die attach nanopaste for high temperature applications on SiC power devices. Microelectronics Reliability, IEEE, 53(3), pp. 473–480. 28. Maur, F. W., 2005. Detecting and Analyzing Wafer Bump Voids with X-Ray Inspection. Electronic Packaging Technology, IEEE, pp. 1-6. 29. Nishiguchi, M., Goto, N., and Nishizawa, H., 1990. Highly Reliable Au-Sn Eutectic Bonding with Back- Ground GaAs LSI Chips. IEEUCHMT, IEEE, pp. 216-222. 30. Ohtaka, T., Kameyama, Y., Yamagishi, I., and Yonemoto, T., 1996. High Performance, Low-Cost Leadframe with a Heat Spreader for HQFPs – Electronic Components and Technology, IEEE., pp.682–686. 31. Olsen, D. R., and Berg, H. M., 1979. Properties of Die Bond Alloys Relating to Thermal Fatigue. Component, Hybrids, and Manufacturing Technology, IEEE, Vol CHMT-2, No 2, pp. 257–263. 32. Pardo, B., Gasse, A., Fargeix, A., Jakovenko, J., Werkhoven, R. J., Perpiñà, X., and Jordà, X., 2013. Microelectronics Reliability Thermal resistance investigations on new leadframe-based LED packages and boards. Microelectronics Reliability, IEEE, 53(8), pp. 1084–1094. 33. Permanasari, A. E., Rohaya, D., Rambli, A., and Dominic, P. D. D., 2010. Forecasting Method Selection Using ANOVA and Duncan Multiple Range Tests on Time Series Dataset, IEEE, pp. 941–945. 34. Perry Sprawls, X-Ray Production[online] Available at: http://www.sprawls.org/ppmi2/XRAYPRO/ [Accessed on 24 December 2015] 35. Peter, J. A. R, and Maria, Z. Reusch., 2015. TRIZ 40 Inventive Principles Application in Project Management. Intelligent Data Acquisition and Advanced Computing Systems, IEEE, pp. 521–526. 36. Production of Radiation for Industrial Radiography[online] Available at: https://www.nde-ed.org/EducationResources/CommunityCollege/RadiationSafety/theory/production.htm [Accessed on 24 December 2015] 37. Qi, R. J., Duan, S. Q., Li, M., Chang, V., Wu, J., and Chien, K. W. T., 2013. Study on a Leaf-like Bonding pad Defect. Physical and Failure Analysis of Integrated Circuits (IPFA), IEEE, pp. 481–484. 38. Said, A. F., Bennett, B. L., Karam, L. J., and Pettinato, J., 2010. Robust Automatic Void Detection In Solder Balls. ICASSP, IEEE, 1(iii), pp. 1650–1653. 39. Schneck, E., and Demé, B., 2015. Structural characterization of soft interfaces by standing-wave fluorescence with X-rays and neutrons. Current Opinion in Colloid & Interface Science, ScienceDirect, pp. 1–9. 40. Schulze, H., Niedernostheide, F., Pfirsch, F., and Baburske, R., 2013. Limiting Factors of the Safe Operating Area for Power Devices. Transaction in Electron Devices, IEEE, 60(2), pp. 551–562. 41. Siow, K. S., 2012. Mechanical properties of nano-silver joints as die attach materials. Journal of Alloys and Compounds, 514, pp. 6–19. 42. SolidCreativity, 2014. TRIZ40 [online] Available at: http://www.triz40.com/TRIZ_GB.php [Accessed on 5 April 2014] 43. Su, C., Chiang, T., Chiao, K., and Sigma, A. S., 2005. Optimizing the IC Delamination Quality via Six-Sigma Approach. Electronics Packaging Manufacturing, IEEE, 28(3), pp. 241–248. 44. Thang, T.S., Sun, D., Koay, H., Sabudin, M., Thompson, J., Martin, P., and Rajkomar, P., 2005. Characterization of Au-Sn Eutectic Die Attach Process for Optoelectronics Device. International Symposium on Electronics Materials and Packaging (EMAP2005), IEEE, 118–124. 45. Trivedi, M., and Shenai, K., 1997. Trade-off in IGBT Safe Operating Area and Performance Parameters, 1997 IEEE, pp. 949-954 46. Umemura, E., Fukunaga, H., Koga, Y., and Nakayashiki, H., 2005. A Novel Void Detection Technique for Via Filling Process. IEEE, pp. 225–228. 47. Vârúescu, D., Ilian, V. E., and Bâzu, M., 2014. Thermographic analysis with enhanced emissivity. IEEE, 283-286. 48. Viduya, L. A., Gerbsch, E. W., Hayes, M. B., Campbell, R. J., and Nakanishi, T. G., 1996. The Effects of Solder Voids in the Device to Substrate Interface for Electric Vehicle and Other Power Applications. IEEE, pp. 99–104. 49. Wolfgang.S, 2007. Void-Detection in Power Transistors for the automotive use. Master Thesis, Infineon Technologies AG. 50. Wu, H., Lin, K., and Lin, S., 2012. A study on the heat dissipation of high power multi-chip COB LEDs. Microelectronics Journal, 43(4), pp. 280–287. 51. Xian, T. S., and Choon, K. F., 2013. Study Of Top Paddle Delamination On Cu Leadframe. Electronics Packaging Technology, IEEE, pp. 827–830. 52. Xu, C., Guo, X., Jiang, H., and Zhang, Z., 2014. Modeling and simulation of self-heating effect with Temperature Difference Air Flow Sensor. Electronic Packaging Technology, IEEE, pp. 655–659. 53. Yang, J., and Tan, A., 1999. Palladium Pre-Plated Copper Leadframe for DRAM LOC Packages, Electronic Component and Technology, IEEE, pp. 842–847. 54. Yang, Z., Zhang, W., Tian, Y., Li, Z., and Zong, H., 2008. Testing Application of Scanning Acoustic Microscope for Adhesive Characteristics of Explosive / Aluminum-Alloy Interface, Nondestructive Testing, 25-28 Oct 2008, 25–28. 55. Yazdan Mehr, M., Bahrami, A., Fischer, H., Gielen, S., Corbeij, R., van Driel, W.D., and Zhang, G.Q., 2015. An overview of scanning acoustic microscope, a reliable method for non-destructive failure analysis of microelectronic components. Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), IEEE, pp 1-4. 56. Yeoh, T.J., and Yeoh, T.S., 2010. TRIZ: Application of Advanced Problem Solving Methodology (ARIZ) in Manufacturing, Electronic Manufacturing Technology, pp 1-4. 57. Yeoh, T.S, Yeoh, T.J, and Song, C.L., 2012. TRIZ-Systematic Innovation in Manufacturing, 3rd Printing, FirstFruit. 58. Yen, F., Hung, L., Kao, N., and Jiang, D. S., 2014. MoldFlow Simulation Study on Void Risk Prediction for FCCSP with Molded Underfill Technology, Electronics Packaging Technology, IEEE, (153), 817–821. 59. Youssef, T., Rmili, W., Woirgard, E., Azzopardi, S., Vivet, N., Martineau, D., and Meuret, R., 2015. Microelectronics Reliability Power modules die attach : A comprehensive evolution of the nanosilver sintering physical properties versus its porosity. Microelectronics Reliability, ScienceDirect, pp 1-6. 60. Yu, Y., Yao, S. A., Wang, S., Chen, W., and Jiang, Y. W., 2008. Effects of Dispensed Solder Paste Amount on Solder Void Performance in a PQFN Package. IEEE, (15), pp 896–900. 61. Zhu, N., 1999, Thermal impact of solder voids in the electronic packaging. Fifteenth IEEE SEMI THERM Symposium, pp. 22–29. 62. Zou, C., 2009. A Study of Anti-phishing Strategies Based on TRIZ. 2009 International Conference on Networks Security, Wireless Communications and Trusted Computing, IEEE, pp. 536-538.

Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ

Similar Items