Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications

The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in sof...

Full description

Saved in:

Bibliographic Details
Main Author:	Dinar, Ahmed Musa
Format:	Thesis
Language:	English English
Published:	2020
Subjects:	T Technology (General)
Online Access:	http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-utem-ep.25424
record_format	uketd_dc
institution	Universiti Teknikal Malaysia Melaka
collection	UTeM Repository
language	English English
advisor	Mohd Zain, Anis Suhaila
topic	T Technology (General) T Technology (General)
spellingShingle	T Technology (General) T Technology (General) Dinar, Ahmed Musa Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
description	The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in software. Then, different works followed the first modeling and simulation of ISFET by using widely available commercial CAD simulations. Unfortunately, the commercial TCAD is not supplied with model, material, and electrochemical packages to effectively manage the ISFET process and its operations. The main objective of this research is a comprehensive, accurate modeling and simulation of SG and DG ISFET devices. First, the adaptation of the Gouy-Chapman-Stern model mathematically and using TCAD to compensate for the roll-off non-ideality have been proposed. Performance analysis of conventional ISFET for six high-k materials as a Stern layer sensing membrane was also implemented. Moreover, a design and characterization of double-gate (DG) ISFET for SiO2 and Six high-k sensing membrane toward beyond Nernst limit sensitivity was done. Finally, a model for the geometrical parameter's impact on DG ISFET sensitivity was proposed. To achieve these objectives, the parameters of the silicon semiconductor material (that is, energy bandgap, permittivity, affinity, and density of states) are reconstructed in the electrolyte solution utilizing user-defined statement offered by Silvaco ATLAS. The electrostatic solution of the electrolyte area can also be investigated by constructing a numerical solution for the semiconductor equation in this area. The devices were virtually fabricated using ATHENA module of TCAD software. The materials used as a sensing membrane in devices were normal silicon dioxide (SiO2) and six high-k material (TiO2, Ta2O5, ZrO2, Al2O3, HfO2, and Si3N4). Then, the developed TCAD is used with the design of experiments (DOE) to investigate the effect of geometrical parameters on the performance of DG ISFETs and enhance the classical model. Three and five geometrical parameters, namely, buried oxide, silicon body, top oxide, channel length, and electrolyte thickness, are considered as independent factors in the DOE. Validation results revealed that the developed TCAD model has an acceptable agreement with experimental results and theoretical models in SG and DG ISFET in terms of sensitivity and ideal amplification ratio. On the other hand, silicon body thickness does not only affect the sensitivity toward the ultra-thin body but also can achieve an ultra-thin-body-buried oxide (Box). Channel length and electrolyte thickness as new investigated parameters also showed a clear impact on ISFET sensing properties. Furthermore, the developed TCAD and RSM mathematical models agreed with real experimental results in terms of average sensitivity and amplification ratio. The final design that depends on the control model resulted in a sensitivity ~1250 mV/pH that is ~21 times higher than the Nernst limit. To sum up, this study can open new directions for further analysis and optimization. Besides, the small sensing area and the FDSOI ISFET-based technology of the device can make the sensors ideal for the biomedical and IoT devices market.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Dinar, Ahmed Musa
author_facet	Dinar, Ahmed Musa
author_sort	Dinar, Ahmed Musa
title	Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
title_short	Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
title_full	Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
title_fullStr	Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
title_full_unstemmed	Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
title_sort	modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications
granting_institution	Universiti Teknikal Malaysia Melaka
granting_department	Faculty of Electronics and Computer Engineering
publishDate	2020
url	http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf
_version_	1776103127859068928
spelling	my-utem-ep.254242023-07-28T15:15:33Z Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications 2020 Dinar, Ahmed Musa T Technology (General) TK Electrical engineering. Electronics Nuclear engineering The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in software. Then, different works followed the first modeling and simulation of ISFET by using widely available commercial CAD simulations. Unfortunately, the commercial TCAD is not supplied with model, material, and electrochemical packages to effectively manage the ISFET process and its operations. The main objective of this research is a comprehensive, accurate modeling and simulation of SG and DG ISFET devices. First, the adaptation of the Gouy-Chapman-Stern model mathematically and using TCAD to compensate for the roll-off non-ideality have been proposed. Performance analysis of conventional ISFET for six high-k materials as a Stern layer sensing membrane was also implemented. Moreover, a design and characterization of double-gate (DG) ISFET for SiO2 and Six high-k sensing membrane toward beyond Nernst limit sensitivity was done. Finally, a model for the geometrical parameter's impact on DG ISFET sensitivity was proposed. To achieve these objectives, the parameters of the silicon semiconductor material (that is, energy bandgap, permittivity, affinity, and density of states) are reconstructed in the electrolyte solution utilizing user-defined statement offered by Silvaco ATLAS. The electrostatic solution of the electrolyte area can also be investigated by constructing a numerical solution for the semiconductor equation in this area. The devices were virtually fabricated using ATHENA module of TCAD software. The materials used as a sensing membrane in devices were normal silicon dioxide (SiO2) and six high-k material (TiO2, Ta2O5, ZrO2, Al2O3, HfO2, and Si3N4). Then, the developed TCAD is used with the design of experiments (DOE) to investigate the effect of geometrical parameters on the performance of DG ISFETs and enhance the classical model. Three and five geometrical parameters, namely, buried oxide, silicon body, top oxide, channel length, and electrolyte thickness, are considered as independent factors in the DOE. Validation results revealed that the developed TCAD model has an acceptable agreement with experimental results and theoretical models in SG and DG ISFET in terms of sensitivity and ideal amplification ratio. On the other hand, silicon body thickness does not only affect the sensitivity toward the ultra-thin body but also can achieve an ultra-thin-body-buried oxide (Box). Channel length and electrolyte thickness as new investigated parameters also showed a clear impact on ISFET sensing properties. Furthermore, the developed TCAD and RSM mathematical models agreed with real experimental results in terms of average sensitivity and amplification ratio. The final design that depends on the control model resulted in a sensitivity ~1250 mV/pH that is ~21 times higher than the Nernst limit. To sum up, this study can open new directions for further analysis and optimization. Besides, the small sensing area and the FDSOI ISFET-based technology of the device can make the sensors ideal for the biomedical and IoT devices market. 2020 Thesis http://eprints.utem.edu.my/id/eprint/25424/ http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf text en public http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf text en validuser https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=119777 phd doctoral Universiti Teknikal Malaysia Melaka Faculty of Electronics and Computer Engineering Mohd Zain, Anis Suhaila 1. Abadi, H.K.F., Yusof, R., Danial Naghib, S., Ahmadi, M.T., Rahmani, M., Kiani, M.J., and Ghadiri, M., 2014. Semi Analytical Modeling of Quantum Capacitance of Graphene-Based Ion Sensitive Field Effect Transistor. Journal of Computational and Theoretical Nanoscience, 11 (3), pp.596–600. 2. Abdolkader, T.M., 2016a. A Numerical Simulation Tool for Nanoscale Ion-Sensitive Field-Effect Transistor. International Journal of Numerical Modelling, 29 (6), pp.1118–1128. 3. Abdolkader, T.M., 2016b. A Numerical Simulation Tool for Nanoscale Ion-Sensitive Field-Effect Transistor. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 29 (6), pp.1118–1128. 4. Abdolkader, T.M., and Alahdal, A.G., 2018. Performance Optimization of Single-Layer and Double-layer High-k Gate Nanoscale Ion-Sensitive Field-Effect Transistors. Sensors and Actuators, B: Chemical, 259, pp.36–43. 5. Abe, H., Esashi, M., and Matsuo, T., 1979. ISFET’s Using Inorganic Gate Thin Films. IEEE Transactions on Electron Devices, 26 (12), pp.1939–1944. 6. Abidin, N.F.Z., Ahmad, I., Ker, P.J., and Menon, P.S., 2017. Performance Characterization of Schottky Tunneling Graphene Field Effect Transistor at 60 nm Gate Length. Sains Malaysiana, 46 (7), pp.1089–1095. 7. Ajay, Narang, R., Saxena, M., and Gupta, M., 2017. Analytical Model of pH sensing Characteristics of Junctionless Silicon on Insulator ISFET. IEEE Transactions on Electron Devices, 64 (4), pp.1742–1750. 8. Akiyama, T., Ujihira, Y., Okabe, Y., Sugano, T., and Niki, E., 1982. Ion-Sensitive Field-Effect Transistors with Inorganic Gate Oxide for pH Sensing. IEEE Transactions on Electron Devices, 29 (12), pp.1936–1941. 9. Anil Kumar, A.K., 2013. Optimization of Threshold Voltage for 65nm PMOS Transistor using Silvaco TCAD Tools. IOSR Journal of Electrical and Electronics Engineering, 6 (1), pp.62–67. 10. Arshad, M.K.M., Adzhri, R., Fathil, M.F.M., and Gopinath, S.C., 2018. Field-Effect Transistor-Integration with TiO2 Nanoparticles for Sensing of Cardiac Troponin I Biomarker. Journal of Nanoscience and Nanotechnology, 18 (8), pp.5283–5291. 11. Asgari, B., and Amani, E., 2017. A multi-objective CFD Optimization of Liquid Fuel Spray Injection in Dry-Low-Emission Gas-Turbine Combustors. Applied Energy, 203, pp.696–710. 12. ATLAS User ’ s Manual, 2016. CA, USA. 13. Ayele, G.T., Monfray, S., Ecoffey, S., Boeuf, F., Cloarec, J.P., Drouin, D., and Souifi, A., 2018. Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI. IEEE Journal of the Electron Devices Society, 6 (August), pp.1026–1032. 14. Bandiziol, A., Palestri, P., Pittino, F., Esseni, D., and Selmi, L., 2015. A TCAD-based Methodology to Model the Site-binding Charge at ISFET/Electrolyte Interfaces. IEEE Transactions on Electron Devices, 62 (10), pp.3379–3386. 15. Bañuls, M.J., Puchades, R., and Maquieira, Á., 2013. Chemical Surface Modifications for the Development of Silicon-based Label-Free Integrated Optical (IO) Biosensors: A review. Analytica Chimica Acta, 777, pp.1–16. 16. Bausells, J., Carrabina, J., Errachid, A., and Merlos, A., 1999. Ion-Sensitive Field-Effect Transistors Fabricated in a Commercial CMOS Technology. Sensors and Actuators, B: Chemical, 57 (1–3), pp.56–62. 17. Bergveld, P., 1970. Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements. IEEE Transactions on Biomedical Engineering, BME-17 (1), pp.70–71. 18. Bergveld, P., 1972. Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology. IEEE Transactions on Biomedical Engineering, 19 (5), pp.342–351. 19. Bergveld, P., 1980. Electromedical Instrumentation: A Guide for Medical Personnel. 1st Editio. Cambridge University Press Archive. 20. Bergveld, P., 2003. Thirty Years of ISFETOLOGY. Sensors and Actuators B: Chemical, 88 (1), pp.1–20. 21. Bezerra, M.A., Santelli, R.E., Oliveira, E.P., Villar, L.S., and Escaleira, L.A., 2008. Response Surface Methodology (RSM) as a Tool for Optimization in Analytical Chemistry. Talanta, 76 (5), pp.965–977. 22. Bhardwaj, R., Sinha, S., Sahu, N., Majumder, S., Narang, P., and Mukhiya, R., 2019. Modeling and Simulation of Temperature Drift for ISFET-based pH Sensor and its Compensation Through Machine Learning Techniques. International Journal of Circuit Theory and Applications, 47 (6), pp.954–970. 23. Bösiger, P., Richard, I.M.T., Le Gat, L., Michen, B., Schubert, M., Rossi, R.M., and Fortunato, G., 2018. Application of Response Surface Methodology to Tailor the Surface Chemistry of Electrospun Chitosan-Poly (Ethylene Oxide) Fibers. Carbohydrate Polymers, 186, pp.122–131. 24. Bousse, L., Bousse, L., De Rood, N.F., and Bergveld, P., 1983. Operation of Chemically Sensitive Field-Effect Sensors As a Function of the Insulator-Electrolyte Interface. IEEE Transactions on Electron Devices, 30 (10), pp.1263–1270. 25. Bousse, L., Mostarshed, S., Van der Schoot, B., and de Rooij, N.F., 1994a. Comparison of the Hysteresis of Ta2O5 and Si3N4 pH-Sensing Insulators. Sensors and Actuators: B. Chemical, 17 (2), pp.157–164. 26. Bousse, L., Mostarshed, S., Van der Schoot, B., and de Rooij, N.F., 1994b. Comparison of the Hysteresis of Ta2O5 and Si3N4 pH-Sensing Insulators. Sensors and Actuators: B. Chemical, 17 (2), pp.157–164. 27. Brzoska, J.B., Azouz, I.B., and Rondelez, F., 1994. Silanization of Solid Substrates: A Step toward Reproducibility. Langmuir, 10 (11), pp.4367–4373. 28. Buck, R.P., Hackleman, D.E., and Kenan, W.R., 1977. Field effect potentiometric sensors. Analytical Chemistry, 49 (14), pp.2315–2321. 29. Buitrago, E., Fagas, G., Badia, M.F.B., Georgiev, Y.M., Berthomé, M., and Ionescu, A.M., 2013. Junctionless Silicon Nanowire Transistors for the Tunable Operation of a Highly Sensitive, Low Power Sensor. Sensors and Actuators, B: Chemical, 183, pp.1–10. 30. Buitrago, E., Fernández-Bolaños, M., and Ionescu, A.M., 2012. Vertically Stacked Si Nanostructures for Biosensing Applications. Microelectronic Engineering, 97, pp.345–348. 31. Cambiaso, A., Grattarola, M., Arnaldi, G., Martinoia, S., and Massobrio, G., 1990. Detection of Cell Activity via ISFET Devices: Modelling and Computer Simulations. Sensors and Actuators: B. Chemical, 1 (1–6), pp.373–379. 32. Chan, D., Healy, T.W., and White, L.R., 1976. Electrical Double layer Interactions Under Regulation by Surface Ionization Equilibria-Dissimilar Amphoteric Surfaces. Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 72, pp.2844–2865. 33. Chang, L.-B., Ko, H.-H., Lee, Y.-L., Lai, C.-S., and Wang, C.-Y., 2006. The Electrical and pH-Sensitive Characteristics of Thermal Gd2O3 ∕ SiO2-Stacked Oxide Capacitors. Journal of The Electrochemical Society, 153 (4), pp.G330–G332. 34. Chen, S., Bomer, J.G., Carlen, E.T., and Van Den Berg, A., 2011. Al2O3/Silicon NanoISFET with Near Ideal Nernstian Response. Nano Letters, 11 (6), pp.2334–2341. 35. Chen, S.M., and Chzo, W.Y., 2006. Simultaneous Voltammetric Detection of Dopamine and Ascorbic Acid using Didodecyldimethylammonium Bromide (DDAB) Film-Modified Electrodes. Journal of Electroanalytical Chemistry, 587 (2), pp.226–234. 36. Chew, K.W., Yeo, K.S., and Chu, S.F., 2004. Impact of Technology Scaling on the 1/f Noise of Thin and Thick Gate Oxide Deep Submicron NMOS Transistors. IEE Proceedings: Circuits, Devices and Systems, 151 (5), pp.415–421. 37. Chi, L.L., Chou, J.C., Chung, W.Y., Sun, T.P., and Hsiung, S.K., 2000. Study on Extended Gate Field Effect Transistor with Tin Oxide Sensing Membrane. Materials Chemistry and Physics, 63 (1), pp.19–23. 38. Choi, B., Lee, J., Yoon, J., Ahn, J.H., Park, T.J., Kim, D.M., Kim, D.H., and Choi, S.J., 2015. TCAD-Based Simulation Method for the Electrolyte–Insulator–Semiconductor Field-Effect Transistor. IEEE Transactions on Electron Devices, 62 (3), pp.1072–1075. 39. Chou, J.C., and Liao, L.P., 2005. Study on pH at the Point of Zero Charge of TiO2 pH Ion-Sensitive Field Effect Transistor Made by the Sputtering Method. Thin Solid Films, 476 (1), pp.157–161. 40. Chou, J.C., and Liao, L.P., 2004. Study of TiO2Thin Films for Ion Sensitive Field Effect Transistor Application with RF Sputtering Deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43 (1), pp.61–65. 41. Chou, J.C., and Weng, C.Y., 2001. Sensitivity and Hysteresis Effect in Al2O3 Gate pH-ISFET. Materials Chemistry and Physics, 71 (2), pp.120–124. 42. Chuan, J., Shin, Y., and Lung, J., 2000. Simulation of Ta2O5-Gate ISFET Temperature Characteristics. Sensors and Actuators B: Chemical, 71 (1–2), pp.71–74. 43. Chung, I.Y., Jang, H., Lee, J., Moon, H., Seo, S.M., and Kim, D.H., 2012. Simulation Study on Discrete Charge Effects of SiNW Biosensors According to Bound Target Position using a 3D TCAD Simulator. Nanotechnology, 23 (6), pp.1–8. 44. Clark, L.C., and Lyons, C., 1962. Electrode Systems for Continuous Monitoring in Cardiovascular Surgery. Annals Of The New York Academy Of Sciences, 102 (1), pp.29–45. 45. Colinge, J.-P., 2004. Silicon-on-Insulator Technology: Materials to VLSI, 3rd ed., US: Springer. 46. Cukor, G., Jurkovi, Z., and Sekuli, M., 2009. Rotatable Central Composite Design of Experiments Versus Taguchi Method in the Optimization of Turning. METALURGIJA, 50 (1), pp.17–20. 47. Deeying, J., Asawarungsaengkul, K., and Chutima, P., 2018. Multi-Objective Optimization on Laser Solder Jet Bonding Process in Head Gimbal Assembly using the Response Surface Methodology. Optics and Laser Technology, 98, pp.158–168. 48. Dhahi, T.H.S., Bin Hashim, U.D.A., Ahmed, N.M., and Mat Taib, A., 2010. A Review on the Electrochemical Sensors and Biosensors Composed of Nanogaps as Sensing Material. Journal of Optoelectronics and Advanced Materials, 12 (9), pp.1857–1862. 49. Dinar, A.M., Mohd Zain, A., Salehuddin, F., Attiah, M.L., Abdulhameed, M.K., and Mohsen, M. k., 2019. Modeling and Simulation of Electrolyte pH Change in Conventional ISFET using Commercial Silvaco TCAD. In: IOP Conference Series: Materials Science and Engineering. pp.1–12. 50. Dorota Sobczyńska, W.T., 1984. ZrO2 Gate pH-Sensitive Field Effect Transistor. Sensors and Actuators, 6 (2), pp.93–105. 51. Elyasi, A., Fouladian, M., and Jamasb, S., 2018. Counteracting Threshold-Voltage Drift in Ion-Selective Field Effect Transistors (ISFETs) Using Threshold-Setting Ion Implantation. IEEE Journal of the Electron Devices Society, 6 (c), pp.747–754. 52. Fog, A., and Buck, R.P., 1984. Electronic Semiconducting Oxides as pH Sensors. Sensors and Actuators, 5 (2), pp.137–146. 53. Fromherz, P., Offenhausser, A., and Vetrrer, T., 1978. A Neuron-Silicon Junction: A Retzius Cell of the Leech on an Insulated-Gate Field-Effect Transistor. Science, 252 (5010), pp.1290–1293. 54. Fung, C.D., Cheung, P.W., and Ko, W.H., 1986. A Generalized Theory of an Electrolyte-Insulator-Semiconductor Field-Effect Transistor. IEEE Transactions on Electron Devices, 33 (1), pp.8–18. 55. Garner, D.M., Bai, H., Georgiou, P., Constandinou, T.G., Reed, S., Shepherd, L.M., Wong, W., Lim, K.T., and Toumazou, C., 2010. A Multichannel DNA SoC for Rapid Point-of-Care Gene Detection. In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference. pp.492–493. 56. Garvey, T.D., Lincoln, P., Pedersen, C.J., Martin, D., and Johnson, M., 2003. BioSPICE: Access to the Most Current Computational Tools for Biologists. OMICS A Journal of Integrative Biology, 7 (4), pp.411–420. 57. Georgiou, P., and Toumazou, C., 2008. Chemical Bionics - A Novel Design Approach Using Ion Sensitive Field Effect Transistors. IEEE Biomedical Circuits and Systems Conference - Intelligent Biomedical Systems, pp.229–232. 58. Ghosal, P.S., Kattil, K. V., Yadav, M.K., and Gupta, A.K., 2018. Adsorptive Removal of Arsenic by Novel Iron/Olivine Composite: Insights Into Preparation and Adsorption Process by Response Surface Methodology and Artificial Neural Network. Journal of Environmental Management, 209, pp.176–187. 59. Grattarola, M., Martinoia, S., Meloni, M., Tedesco, M., and Parodi, M.T., 1993. One-Line Extracellular pH Measurements in Culture as a Tool for Cell Metabolism Monitoring. S.T.P. Pharma Sciences, 3 (1), pp.31–34. 60. Grattarola, M., Massobrio, G., and Martinoia, S., 1992. Modeling H/sup +/-sensitive FETs with SPICE. IEEE Transactions on Electron Devices, 39 (4), pp.813–819. 61. Gündoʇdu, T.K., Deniz, ̄rem, Çalişkan, G., Şahin, E.S., and Azbar, N., 2016. Experimental design methods for bioengineering applications. Critical Reviews in Biotechnology, 36 (2), pp.368–388. 62. Gunst, R.F., Myers, R.H., and Montgomery, D.C., 1996. Response Surface Methodology: Process and Product Optimization Using Designed Experiments. Wiley. 63. Han, Y., Offenhäusser, A., and Ingebrandt, S., 2006. Detection of DNA Hybridization by a Field-Effect Transistor with Covalently Attached Catcher Molecules. In: Surface and Interface Analysis. pp.176–181. 64. Harame, D.L., Bousse, L.J., Shott, J.D., and Meindl, J.D., 1987. Ion-Sensing Devices with Silicon Nitride and Borosilicate Grlass Insulators. IEEE Transactions on Electron Devices, 34 (8), pp.1700–1707. 65. Hasan, N., Hou, B., Moore, A.L., and Radadia, A.D., 2018. Enhanced Ionic Sensitivity in Solution-Gated Graphene-Hexagonal Boron Nitride Heterostructure Field-Effect Transistors. Advanced Materials Technologies, 3 (8), pp.1–8. 66. Hashim, Y., and Sidek, O., 2012. Output Characteristics Model for an a-Si ISFET pH Sensor. IEEJ Transactions on Electrical and Electronic Engineering, 7 (2), pp.126–129. 67. Hazarika, C., Dutta, A., and Sharma, S., 2017. Modelling of Reference Electrode for a Si3N4 Gate pH ISFET. Proceedings of 2017 International Conference on Innovations in Electronics, Signal Processing and Communication, IESC 2017, pp.149–154. 68. Healy, W., Yates, D.E., and Levine, S., 1974. Site-binding Model of the Electrical Double Layer at the Oxide / Water Interface. Journal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 70, pp.1807–1818. 69. Hendricks, W.A., and Robey, K.W., 1996. The Sampling Distribution of the Coefficient of Variation. The Annals of Mathematical Statistics, 7 (3), pp.129–132. 70. Hilly Gohain Baruah, S.S., 2015. Modeling and Simulation of Electric Potential Profile of a Square Ion Sensitive Field Effect Transistor in the Diffused Layer. International Conference on Electrical, Electronics, Signals, Communication and Optimization, EESCO 2015, pp.1–5. 71. HSPICE Simulation and Analysis User Guide Release U-2006.03-PA, 2006. 72. Huang, Y.J., Lin, C.C., Huang, J.C., Hsieh, C.H., Wen, C.H., Chen, T.T., Jeng, L.S., Yang, C.K., Yang, J.H., Tsui, F., Liu, Y.S., Liu, S., and Chen, M., 2015. High Performance Dual-Gate ISFET with Non-Ideal Effect Reduction Schemes in a SOI-CMOS Bioelectrical SoC. In: Technical Digest - International Electron Devices Meeting, IEDM. pp.29.2.1-29.2.4. 73. Hwan Kim, D., Kim, J.-Y., Jang, J., Choi, S.-J., Choi, B., Choi, Y.-K., Lee, J., Yoon, J., and Myong Kim, D., 2015. A Highly Responsive Silicon Nanowire/Amplifier MOSFET Hybrid Biosensor. Scientific Reports, 5 (1), pp.1–6. 74. Ingebrandt, S., 2015. Bioelectronics: Sensing Beyond the Limit. Nature Nanotechnology, 10 (9), pp.734–735. 75. Ingebrandt, S., Han, Y., Nakamura, F., Poghossian, A., Schöning, M.J., and Offenhäusser, A., 2007. Label-Free Detection of Single Nucleotide Polymorphisms Utilizing the Differential Transfer Function of Field-Effect Transistors. Biosensors and Bioelectronics, 22 (12), pp.2834–2840. 76. Jackson, A. and Zimmermann, J.B., 2012. Neural Interfaces for the Brain and Spinal Cord-Restoring Motor Function. Nature Reviews Neurology, 8 (12), pp.690–699. 77. Jamasb, S., Collins, S., and Smith, R.L., 1998a. A Physical Model for Drift in pH ISFETs. Sensors and Actuators B: Chemical, 49 (1–2), pp.146–155. 78. Jamasb, S., Collins, S.D., and Smith, R.L., 1998b. A Physical Model for Threshold Voltage Instability in Si N -Gate H -Sensitive FET’s (pH ISFET’s). IEEE Transactions on Electron Devices, 45 (6), pp.1239–1245. 79. Jamasb, S., Collins, S.D., and Smith, R.L., 1997. A Physically-based Model for Drift in Al2O3-Gate pH ISFET’s. In: Proceedings of International Solid State Sensors and Actuators Conference (Transducers ’97), pp.1379–1382. 80. Janata, J., 1994. Historical review: Twenty years of ion-selective field-effect transistors. The Analyst, 119 (11), pp.2275–2278. 81. Jang, H.J., and Cho, W.J., 2014. Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body. Scientific Reports, 4, pp.1–8. 82. Jang, H.J. and Cho, W.J., 2012. Fabrication of High-Performance Fully Depleted Silicon-on-Insulator based Dual-gate Ion-Sensitive Field-Effect Transistor Beyond the Nernstian Limit. Applied Physics Letters, 100 (7), pp.0737011–0737014. 83. Jang, H.J., and Cho, W.J., 2011. High Performance Silicon-on-Insulator Based Ion-Sensitive Field-Effect Transistor using High-k stacked Oxide Sensing Membrane. Applied Physics Letters, 99 (4), pp.2011–2014. 84. Jang, H.J., Bae, T.E., and Cho, W.J., 2012. Improved Sensing Performance of Polycrystalline-Silicon Based Dual-Gate Ion-Sensitive Field-Effect Transistors using High-k Stacking Engineered Sensing Membrane. Applied Physics Letters, 100 (25), pp.2537031–2537034. 85. Jang, J., Kim, J., Kim, S., Mo, H.S., Kim, D.M., Choi, S.J., Park, B.G., Kim, D.H., and Park, J., 2017. Analysis and Modeling on the pH-Dependent Current Drift of Si Nanowire Ion-Sensitive Field Effect Transistor (ISFET)-Based Biosensors. Journal of Nanoscience and Nanotechnology, 17 (5), pp.3146–3150. 86. Janicki, M., Daniel, M., Szermer, M., and Napieralski, A., 2004. Ion Sensitive Field Effect Transistor Modelling for Multidomain Simulation Purposes. Microelectronics Journal, 35 (10), pp.831–840. 87. Jankovic, V., and Chang, J.P., 2011. HfO2 and ZrO2–Based Microchemical Ion Sensitive Field Effect Transistor (ISFET) Sensors: Simulation & Experiment. Journal of The Electrochemical Society, 158 (10), pp.P115–P117. 88. Jiang, Y., Liu, X., Dang, T.C., Huang, X., Feng, H., Zhang, Q., and Yu, H., 2018. A High-Sensitivity Potentiometric 65-nm CMOS ISFET Sensor for Rapid E. coli Screening. IEEE Transactions on Biomedical Circuits and Systems, 12 (2), pp.402–415. 89. Kaharudin, K.E., Salehuddin, F., Zain, A.S.M., Aziz, M.N.I.A., and Ahmad, I., 2016. Application of Taguchi Method for Lower Subthreshold Swing in Ultrathin Pillar SOI VDG- MOSFET Device. Journal of Advanced Research in Applied Sciences and Engineering Technology, 2 (1), pp.30–43. 90. Kaisti, M., 2017. Detection principles of biological and chemical FET sensors. Biosensors and Bioelectronics. 91. Kaisti, M., Zhang, Q., Prabhu, A., Lehmusvuori, A., Rahman, A., and Levon, K., 2015. An Ion-Sensitive Floating Gate FET Model: Operating Principles and Electrofluidic Gating. IEEE Transactions on Electron Devices, 62 (8), pp.2628–2635. 92. Kal, S., and Bhanu Priya, V., 2007. Design and Modeling of ISFET for pH Sensing. IEEE Region 10 Annual International Conference, Proceedings/TENCON, 1 (12), pp.2–5. 93. Karri, R.R., and Sahu, J.N., 2018. Modeling and Optimization by Particle Swarm Embedded Neural Network for Adsorption of Zinc (II) by Palm Kernel Shell based Activated Carbon from Aqueous Environment. Journal of Environmental Management, 206, pp.178–191. 94. Kerkhof, J.C. Van, Olthuis, W., Bergveld, P., and Bos, M., 1991. Tungsten Trioxide (WO3) as an Actuator Electrode Based Coulometric Sensor-Actuator Systems. Sensors and Actuators B: Chemical, 3 (2), pp.129–138. 95. Khataee, A.R., Kasiri, M.B., and Alidokht, L., 2011. Application of Response Surface Methodology in the Optimization of Photocatalytic Removal of Environmental Pollutants using Nanocatalysts. Environmental Technology, 32 (15), pp.1669–1684. 96. Kim, S., Kwon, D.W., Kim, S., Lee, R., Kim, T.H., Mo, H.S., Kim, D.H., and Park, B.G., 2018. Analysis of Current Drift on P-Channel pH-Sensitive SiNW ISFET by Capacitance Measurement. Current Applied Physics, 18, pp.S68–S74. 97. Knopfmacher, O., Tarasov, A., Fu, W., Wipf, M., Niesen, B., Calame, M., and Schönenberger, C., 2010. Nernst Limit in Dual-Gated Si-Nanowire FET Sensors. Nano Letters, 10 (6), pp.2268–2274. 98. Kühnhold, R., and Ryssel, H., 2000. Modeling the pH Response of Silicon Nitride ISFET Devices. Sensors and Actuators, B: Chemical, 68 (1), pp.307–312. 99. Kwon, D.-H., Cho, B.-W., Kim, C.-S., and Sohn, B.-K., 1996. Effects of Heat Treatment on Ta2O5 Sensing Membrane for Low Drift and High Sensitivity pH-ISFET. Sensors and Actuators B: Chemical, 34 (1–3), pp.441–445. 100. Laborde, C., Pittino, F., Verhoeven, H.A., Lemay, S.G., Selmi, L., Jongsma, M.A., and Widdershoven, F.P., 2015. Real-Time Imaging of Microparticles and Living Cells with CMOS Nanocapacitor Arrays. Nature Nanotechnology, 10 (9), pp.791–795. 101. Lee, C.S., Kyu Kim, S., and Kim, M., 2009. Ion-Sensitive Field-Effect Transistor for Biological Sensing. Sensors, 9 (9), pp.7111–7131. 102. Lee, R., Kwon, D.W., Kim, S., Mo, H.S., Kim, D.H., and Park, B.G., 2017. New Type of Ion-Sensitive Field-Effect Transistor with Sensing Region Separate from Gate-Controlled Region. Journal of Nanoscience and Nanotechnology, 17 (11), pp.8280–8284. 103. Lenth, R.V., 2012. Response-Surface Methods in R, Using rsm. Journal of Statistical Software, 2 (December), pp.1–21. 104. Lim, H.K., and Fossum, J.G., 1983. Threshold Voltage of Thin-Film Silicon-on-lnsulator (SOI) MOSFET’s. IEEE Transactions on Electron Devices, 30 (10), pp.1244–1251. 105. Liu, Y., Georgiou, P., Prodromakis, T., Constandinou, T.G., and Toumazou, C., 2011. An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation. IEEE Transactions on Electron Devices, 58 (12), pp.4414–4422. 106. Lord, H.L., Zhan, W., and Pawliszyn, J., 2012. Electrochemical Methods:Fundamentals and Applications. Comprehensive Sampling and Sample Preparation. John Wiley & Sons. 107. Lu, T.F., Wang, J.C., Yang, C.M., Chang, C.P., Ho, K.I., Ai, C.F., and Lai, C.S., 2010. Non-Ideal Effects Improvement of SF6 Plasma Treated Hafnium Oxide Film Based on Electrolyte-Insulator-Semiconductor Structure for pH-Sensor Application. Microelectronics Reliability, 50 (5), pp.742–746. 108. Lue, C.E., Wang, J.C., Pijanowska, D.G., Yang, C.M., Wang, I.S., Lee, H.C., and Lai, C.S., 2010. Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity. Microelectronics Reliability, 50 (5), pp.738–741. 109. Lui, A., Margesin, B., Zanini, V., Zen, M., Soncini, G., and Martinoia, S., 1996. Test Chip for ISFET/CMNOS Technology Development. In: IEEE International Conference on Microelectronic Test Structures, pp.123–128. 110. Ma, Y., Wen, C., Zeng, R., Xu, M., Pan, J., and Wu, D., 2014. Compact Modelling and Simulation of Extended-Gate Ion-Sensitive Field-Effect-Transistor. In: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.31–33. 111. Malik, D., and Pakzad, L., 2018. Experimental investigation on an aerated mixing vessel through electrical resistance tomography (ERT) and response surface methodology (RSM). Chemical Engineering Research and Design, 129, pp.327–343. 112. Martinoia, S., Lorenzelli, L., Massobrio, G., Margesin, B., and Lui, A., 1999. A CAD System for Developing Chemical Sensor-Based Microsystems with an ISFET-CMOS Compatible Technology. Sensors and Materials, 11 (5), pp.279–295. 113. Martinoia, S., and Massobrio, G., 2000. Behavioral macromodel of the ISFET in SPICE. Sensors and Actuators, B: Chemical, 62 (3), pp.182–189. 114. Martinoia, S., Massobrio, G., and Grattarola, M., 1992. An ISFET Model for CAD Applications. Sensors & Actuators: B. Chemical, 8, pp.261–265. 115. Massobrio, G., Grattarola, M., Mattioli, G., and Mattioli, F., 1990. ISFET-Based Biosensor Modeling with SPICE. Sensors and Actuators: B. Chemical, 1 (1–6), pp.401–407. 116. Matsuo, T., and Esashi, M., 1981. Methods of isfet fabrication. Sensors and Actuators, 1 (C), pp.77–96. 117. Matsuo, T., and Wise, K.D., 1974. An Integrated Field-Effect Electrode for Biopotential Recording. IEEE Transactions on Biomedical Engineering, BME-21 (6), pp.485–487. 118. Meixner, L.K., and Koch, S., 1992. Simulation of ISFET Operation Based on the Site-binding Model. Sensors and Actuators: B. Chemical, 6 (1–3), pp.315–318. 119. Merlos, A., Cané, C., Bausells, J., and Esteve, J., 1991. Modelization and Fabrication of ISFET Based Sensors. European Solid-State Device Research Conference, 15, pp.423–426. 120. Microelettronica, D., 1996. An H+-FET-Based System for On-Line Detection of Microorganisms in Waters. Sensors and Actuators B: Chemical, 34 (1–3), pp.245–251. 121. MicroSim PSpice A/D Circuit: User’s Guide, 1996. Program. 122. Miscourides, N., and Georgiou, P., 2015. Impact of Technology Scaling on ISFET Performance for Genetic Sequencing. IEEE Sensors Journal, 15 (4), pp.2219–2226. 123. Mohammadi, E., and Manavizadeh, N., 2018a. An Accurate TCAD-Based Model for ISFET Simulation. IEEE Transactions on Electron Devices, PP, pp.1–7. 124. Mohammadi, E., and Manavizadeh, N., 2018b. An Accurate TCAD-Based Model for ISFET Simulation. IEEE Transactions on Electron Devices, 65 (9), pp.3950–3956. 125. Montgomery, D.C., 2017. Design and Analysis of Simulation Experiments, 9th ed., Wiley. 126. Mukhiya, R., Khanna, V.K., Yadav, J., Sharma, R., Sharma, A., Sinha, S., and Chaudhary, R., 2016. Fabrication and Characterisation of Al Gate N-Metal–Oxide–Semiconductor Field-Effect Transistor, on-Chip Fabricated with Silicon Nitride Ion-Sensitive Field-Effect Transistor. IET Computers & Digital Techniques, 10 (5), pp.268–272. 127. Myers, R.H., Montgomery, D.C., and Anderson-Cook, C.M., 2016. Response Surface Methodology : Process and Product Optimization Using Designed Experiments. John Wiley & Sons. 128. Nagel, L.W., 1975. SPICE2: A Computer Program To Simulate Semiconductor Circuits. PhD dissertation, University of California, Berkeley, CA, and available as Memorandum No ERL-M520, Electronics Research Laboratory, College of Engineering, University of California, Berkeley, CA. 129. Najari, T.E.M., and El-mir, L., 2018. A Novel Model for Graphene-based Ion-Sensitive Field-Effect Transistor. Journal of Computational Electronics, 17 (1), pp.297–303. 130. Nazari, L., Yuan, Z., Ray, M.B., and Xu, C., 2017. Co-conversion of Waste Activated Sludge and Sawdust Through Hydrothermal Liquefaction: Optimization of Reaction Parameters using Response Surface Methodology. Applied Energy, 203, pp.1–10. 131. Niedz, R.P., and Evens, T.J., 2016. Design of Experiments (DOE)—History, Concepts, and Relevance to in Vitro Culture. In Vitro Cellular and Developmental Biology - Plant, 52 (6), pp.547–562. 132. Niu, M.-N., Ding, X.-F., and Tong, Q.-Y., 1996. Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs. Sensors and Actuators B: Chemical, 37 (1–2), pp.13–17. 133. Oehlert, G., 2000. A First Course in Design and Analysis of Experiments, 1st ed., The American Statistician: W. H. Freeman. 134. Ostertagová, E., 2012. Modelling using Polynomial Regression. In: Procedia Engineering. Elsevier, pp.500–506. 135. Pachauri, V., and Ingebrandt, S., 2016. Biologically Sensitive Field-Effect Transistors: From ISFETs to NanoFETs. Essays In Biochemistry, 60 (1), pp.81–90. 136. Palmer, S.M., and Kunji, E.R.S., 2012. Online Analysis and Process Control in Recombinant Protein Production (Review). Methods in Molecular Biology, 866, pp.129–155. 137. Pan, T.M., 2014. Structural Properties and Sensing Characteristics of Sensing Materials. Comprehensive Materials Processing. Elsevier. 138. Pan, T.M., Huang, M. De, Lin, C.W., and Wu, M.H., 2010a. Development of High-k HoTiO3 Sensing Membrane for pH Detection and Glucose Biosensing. Sensors and Actuators, B: Chemical, 144 (1), pp.139–145. 139. Pan, T.M., Huang, M. De, Lin, C.W., and Wu, M.H., 2010b. Development of High-k HoTiO3 Sensing Membrane for pH Detection and Glucose Biosensing. Sensors and Actuators, B: Chemical, 144 (1), pp.139–145. 140. Pan, T.M., and Liao, K.M., 2008. Comparison of Structural and Sensing Characteristics of Pr2O3 and PrTiO3 Sensing Membrane for pH-ISFET Application. Sensors and Actuators, B: Chemical, 133 (1), pp.97–104. 141. Pan, T.M., and Liao, K.M., 2007. Influence of Oxygen Content on the Structural and Sensing Characteristics of Y2O3 Sensing Membrane for pH-ISFET. Sensors and Actuators, B: Chemical, 128 (1), pp.245–251. 142. Pan, T.M., Lin, J.C., Wu, M.H., and Lai, C.S., 2009a. Study of High-k Er2O3 Thin Layers as ISFET Sensitive Insulator Surface for pH Detection. Sensors and Actuators, B: Chemical, 138 (2), pp.619–624. 143. Pan, T.M., Lin, J.C., Wu, M.H., and Lai, C.S., 2009b. Study of High-k Er2O3 Thin Layers as ISFET Sensitive Insulator Surface for pH Detection. Sensors and Actuators, B: Chemical, 138 (2), pp.619–624. 144. Parizi, K.B., Yeh, A.J., Poon, A.S.Y., and Wong, H.S.P., 2012. Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications. Technical Digest - International Electron Devices Meeting, IEDM, pp.557–560. 145. Park, J.K., Jang, H.J., Park, J.T., and Cho, W.J., 2014. SOI Dual-Gate ISFET with Variable Oxide Capacitance and Channel Thickness. Solid-State Electronics, 97, pp.2–7. 146. Passeri, D., Morozzi, A., Kanxheri, K., and Scorzoni, A., 2015. Numerical simulation of ISFET structures for biosensing devices with TCAD tools. BioMedical Engineering Online, 14 (2), pp.1–16. 147. Pharmacology, M., and Benedetto, V., 1990. ISFET-based Biosensor Modeling with SPICE, pp.401–407. 148. Pierret, R.F., 1996. Semiconductor Device Fundamentals, New York: Addison-Wesley 1996. 149. Piet Bergveld, 2003. ISFET, Theory and Practice. In: IEEE Sensor Conference Toronto, pp.1–26. 150. Pittino, F., Palestri, P., Scarbolo, P., Esseni, D., and Selmi, L., 2014. Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors. Solid-State Electronics, 98, pp.63–69. 151. Poghossian, A., and Schöning, M.J., 2004. Detecting Both Physical and (Bio)Chemical Parameters by Means of ISFET Devices. Electroanalysis, 16 (22), pp.1863–1872. 152. Prodromakis, T., Liu, Y., Constandinou, T., Georgiou, P., and Toumazou, C., 2010. Exploiting CMOS Technology to Enhance the Performance of ISFET Sensors. IEEE Electron Device Letters, 31 (9), pp.1053–1055. 153. Prodromakis, T., Liu, Y., and Toumazou, C., 2011. Low-Cost Implementations of pH Monitoring Platforms. Proceedings of IEEE Sensors, pp.1082–1084. 154. Pullano, S.A., Critello, C.D., Mahbub, I., Tasneem, N.T., Shamsir, S., Islam, S.K., Greco, M., and Fiorillo, A.S., 2018. EGFET-based sensors for bioanalytical applications: A review. Sensors (Switzerland). 155. Qavi, A.J., Washburn, A.L., Byeon, J.Y., and Bailey, R.C., 2009. Label-Free Technologies for Quantitative Multiparameter Biological Analysis. Analytical and Bioanalytical Chemistry, 394 (1), pp.121–135. 156. Rahhal, L., Ayele, G.T., Monfray, S., Cloarec, J.P., Fornacciari, B., Pardoux, E., Chevalier, C., Eccofey, S., Drouin, D., Morin, P., Garnier, P., Boeuf, F., and Souifi, A., 2017. High sensitivity pH sensing on the BEOL of industrial FDSOI transistors. Solid-State Electronics, 134, pp.22–29. 157. Rothberg, J.M., Hinz, W., Rearick, T.M., Schultz, J., Mileski, W., Davey, M., Leamon, J.H., Johnson, K., Milgrew, M.J., Edwards, M., Hoon, J., Simons, J.F., Marran, D., Myers, J.W., Davidson, J.F., Branting, A., Nobile, J.R., Puc, B.P., Light, D., Clark, T.A., Huber, M., Branciforte, J.T., Stoner, I.B., Cawley, S.E., Lyons, M., Fu, Y., Homer, N., Sedova, M., Miao, X., Reed, B., Sabina, J., Feierstein, E., Schorn, M., Alanjary, M., Dimalanta, E., Dressman, D., Kasinskas, R., Sokolsky, T., Fidanza, J.A., Namsaraev, E., McKernan, K.J., Williams, A., Roth, G.T., and Bustillo, J., 2011. An integrated semiconductor device enabling non-optical genome sequencing. Nature, 475 (7356), pp.348–352. 158. Rozas, O., Contreras, D., Mondaca, M.A., Pérez-Moya, M., and Mansilla, H.D., 2010. Experimental Design of Fenton and Photo-Fenton Reactions for the Treatment of Ampicillin Solutions. Journal of Hazardous Materials, 177 (1–3), pp.1025–1030. 159. Sahu, J.N., Acharya, J., and Meikap, B.C., 2009. Response Surface Modeling and Optimization of Chromium(VI) Removal from Aqueous Solution using Tamarind Wood Activated Carbon in Batch Process. Journal of Hazardous Materials, 172 (2–3), pp.818–825. 160. Saikia, A., Raj, A., and Goswami, R., 2019. TCAD Calibration and Performance Investigation of an ISFET-based TNT (Explosive) Sensor. Journal of Computational Electronics, (0123456789), pp.1–9. 161. Sakaguchi, T., Morioka, Y., Yamasaki, M., Iwanaga, J., Beppu, K., Maeda, H., Morita, Y., and Tamiya, E., 2007. Rapid and Onsite BOD Sensing System using Luminous Bacterial Cells-Immobilized Chip. Biosensors and Bioelectronics, 22 (7), pp.1345–1350. 162. Schasfoort, R.B.M., Streekstra, G.J., Bergveld, P., Kooyman, R.P.H., and Greve, J., 1989. Influence of an Immunological Precipitate on D.C. and A.C. Behaviour of an isfet. Sensors and Actuators, 18 (2), pp.119–129. 163. Sentaurus Device User Guide, 2013. Synopsys, Mountain View, Simulation. CA, USA. 164. Shen, N.Y., Liu, Z., Minch, B.A., and Ken, E.C., 2003. The chemoreceptive neuron MOS transistors (CνMOS): A novel floating-gate device for molecular and chemical sensing. In: TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., pp.69–72. 165. Sinha, S., Mukhiya, R., Sharma, R., Khanna, P.K., and Khanna, V.K., 2019. Fabrication, Characterization and Electrochemical Simulation of AlN-Gate ISFET pH Sensor. Journal of Materials Science: Materials in Electronics, 30 (7), pp.7163–7174. 166. Sohbati, M., Liu, Y., Georgiou, P., and Toumazou, C., 2012. An ISFET Design Methodology Incorporating CMOS Passivation. In: 2012 IEEE Biomedical Circuits and Systems Conference: Intelligent Biomedical Electronics and Systems for Better Life and Better Environment, pp.65–68. 167. Sohbati, M., and Toumazou, C., 2015. Dimension and Shape Effects on the ISFET Performance. IEEE Sensors Journal, 15 (3), pp.1670–1679. 168. Spijkman, M., Smits, E.C.P., Cillessen, J.F.M., Biscarini, F., Blom, P.W.M., and De Leeuw, D.M., 2011. Beyond the Nernst-Limit with Dual-Gate ZnO Ion-Sensitive Field-Effect Transistors. Applied Physics Letters, 98 (4), pp.2011–2014. 169. Sun, Y., Yang, G., Wen, C., Zhang, L., and Sun, Z., 2018. Artificial Neural Networks with Response Surface Methodology for Optimization of Selective CO2 Hydrogenation using K-promoted Iron Catalyst in a Microchannel Reactor. Journal of CO2 Utilization, 24, pp.10–21. 170. Sze, S.M., and Ng, K.K., 2006. Physics of Semiconductor Devices, Hoboken, NJ, USA: John Wiley & Sons, Inc. 171. Tang, T.B., Johannessen, E.A., Wang, L., Astaras, A., Ahmadian, M., Murray, A.F., Cooper, J.M., Beaumont, S.P., Flynn, B.W., and Cumming, D.R.S., 2002. Toward a Miniature Wireless Integrated Multisensor Microsystem for Industrial and Biomedical Applications. IEEE Sensors Journal, 2 (6), pp.628–635. 172. Tarasov, A., Wipf, M., Stoop, R.L., Bedner, K., Fu, W., Guzenko, V.A., Knopfmacher, O., Calame, M., and Schnenberger, C., 2012. Understanding the Electrolyte Background for Biochemical Sensing with Ion-Sensitive Field-Effect Transistors. ACS Nano, 6 (10), pp.9291–9298. 173. Thakur, H.R., Keshwani, G., and Dutta, J.C., 2017, April. Sensitivity of carbon nanotube based junctionless ion sensitive field effect transistor (CNTJLISFET) for HfO 2 and ZrO 2 gate dielectrics: Experimental and theoretical investigation. In 2017 International Conference on Innovations in Electronics, Signal Processing and Communication (IESC), pp.137-142. 174. Toumazou, C., and Georgiou, P., 2011a. Piet Bergveld - 40 Years of ISFET Technology: From Neuronal Sensing to DNA Sequencing. Electronics Letters, 47 (26), pp.S7–S12. 175. Toumazou, C., and Georgiou, P., 2011b. Bio-inspired Semiconductors for Early Detection and Therapy. In: 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. pp.129–132. 176. Toumazou, C., Shepherd, L.M., Reed, S.C., Chen, G.I., Patel, A., Garner, D.M., Wang, C.J.A., Ou, C.P., Amin-Desai, K., Athanasiou, P., Bai, H., Brizido, I.M.Q., Caldwell, B., Coomber-Alford, D., Georgiou, P., Jordan, K.S., Joyce, J.C., La Mura, M., Morley, D., Sathyavruthan, S., Temelso, S., Thomas, R.E., and Zhang, L., 2013. Simultaneous DNA Amplification and Detection using a pH-Sensing Semiconductor System. Nature Methods, 10 (7), pp.641–646. 177. Tsai, C.W., Tong, L.I., and Wang, C.H., 2010. Optimization of Multiple Responses Using Data Envelopment Analysis and Response Surface Methodology. Tamkang Journal of Science and Engineering, 13 (2), pp.197–203. 178. Uzzal, M.M., Zarkesh-Ha, P., Szauter, P., and Edwards, J., 2017. Behavioral Modeling of Drain Current of an Avalanche ISFET Near Breakdown. In: International System on Chip Conference. Seattle, WA, USA: IEEE, pp.169–173. 179. Van der spiegel, J., Lauks, I., Chan, P., and Babic, D., 1983. The extended gate chemically sensitive field effect transistor as multi-species microprobe. Sensors and Actuators, 4 (C), pp.291–298. 180. Van Hal, R.E.G., Eijkel, J.C.T., and Bergveld, P., 1995. A Novel Description of ISFET Sensitivity with the Buffer Capacity and Double-layer Capacitance as Key Parameters. Sensors and Actuators: B. Chemical, 24 (1–3), pp.201–205. 181. Van Hal, R.E.G., Eijkel, J.C.T., and Piet Bergveld, 1996. A General Model to Describe the Electrostatic Potential at Electrolyte Oxide Interfaces. Advances in Colloid and Interface Science, 69 (1–3), pp.31–62. 182. Van Kerkhof, J.C., and Bergveld, R.B.M.S., 1995. The ISFET Based Heparin Sensor with a Monolayer of Protamine as Affinity Ligand. Biosensors and Bioelectronics, 10 (3–4), pp.269–282. 183. Waleed Shinwari, M., Jamal Deen, M., and Landheer, D., 2007. Study of the Electrolyte-Insulator-Semiconductor Field-Effect Transistor (EISFET) with Applications in Biosensor Design. Microelectronics Reliability, 47 (12), pp.2025–2057. 184. Wang, H., Varghese, J., and Pilon, L., 2011. Simulation of Electric Double Layer Capacitors with Mesoporous Electrodes: Effects of Morphology and Electrolyte Permittivity. Electrochimica Acta, 56 (17), pp.6189–6197. 185. Welch, D., Shah, S., Ozev, S., and Blain Christen, J., 2013. Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset. IEEE Electron Device Letters, 34 (3), pp.456–458. 186. Wu, C.-F., and Hamada, M., 2009. Experiments : planning, analysis, and optimization, Wiley. 187. Wu, X., and Jia, A.Z., 2015. Analysis and Simulation on an ISFET with Back-Gated Structure and High-Mobility Channel Material. In International Conference on Computer Information Systems and Industrial Applications, pp.883–885. 188. Yang, C.-M., Lai, C.-S., Lu, T.-F., Wang, T.-C., and Pijanowska, D.G., 2008. Drift and Hysteresis Effects Improved by RTA Treatment on Hafnium Oxide in pH-Sensitive Applications. Journal of The Electrochemical Society, 155 (11), pp.J326–J330. 189. Yang, L., Zhang, X., Zhang, Q., Tan, M., and Yu, Y., 2018. A High-Speed Small-Area Pixel 16 × 16 ISFET Array Design using 0.35-μm CMOS Process. Microelectronics Journal, 79 (35), pp.107–112.

Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications

Similar Items