Mohamed Hassan, W. F. (2022). Plasma etching process for aluminum-copper metallization by photoresist margin improvement for CMOS 0.13-µm technology.
Chicago Style (17th ed.) CitationMohamed Hassan, Wan Faizal. Plasma Etching Process for Aluminum-copper Metallization by Photoresist Margin Improvement for CMOS 0.13-µm Technology. 2022.
MLA (8th ed.) CitationMohamed Hassan, Wan Faizal. Plasma Etching Process for Aluminum-copper Metallization by Photoresist Margin Improvement for CMOS 0.13-µm Technology. 2022.
Warning: These citations may not always be 100% accurate.