APA引文

Mohamed Hassan, W. F. (2022). Plasma etching process for aluminum-copper metallization by photoresist margin improvement for CMOS 0.13-µm technology.

Chicago Style (17th ed.) Citation

Mohamed Hassan, Wan Faizal. Plasma Etching Process for Aluminum-copper Metallization by Photoresist Margin Improvement for CMOS 0.13-µm Technology. 2022.

MLA引文

Mohamed Hassan, Wan Faizal. Plasma Etching Process for Aluminum-copper Metallization by Photoresist Margin Improvement for CMOS 0.13-µm Technology. 2022.

警告：这些引文格式不一定是100％准确.