Optimization of process parameter variation in double-gate FinFET model using various statistical methods
Double-gate FinFET is identified as a prospect in fulfilling the demands required in replacing the current conventional planar MOSFETs due to several advantages. Specifically in its scalability, reduced leakage current, high drive current, with steep subthreshold swing, subsequently improving the IO...
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http://eprints.utem.edu.my/id/eprint/26899/1/Optimization%20of%20process%20parameter%20variation%20in%20double-gate%20FinFET%20model%20using%20various%20statistical%20methods.pdfhttp://eprints.utem.edu.my/id/eprint/26899/2/Optimization%20of%20process%20parameter%20variation%20in%20double-gate%20FinFET%20model%20using%20various%20statistical%20methods.pdf