Modelling of advanced submicron gate InGaAs/InAIAs pHEMTS and RTD devices for very high frequency applications
InP based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave applications. However, conventional InGaAs/InAlAs pHEMTs have major drawbacks, i.e., very low break...
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Main Author: | Mat Jubadi, Warsuzarina |
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Format: | Thesis |
Language: | English |
Published: |
2015
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Subjects: | |
Online Access: | http://eprints.uthm.edu.my/1752/1/24p%20WARSUZARINA%20MAT%20JUBADI.pdf |
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