Investigation of intermediate layer for Ag/Si metal-semiconductor contacts

The intermediate layer is a crucial component in thin film metal contacts. In determining Ohmic characteristics, selection of materials used as metal contact can affect device performance. However, in determine a good electrical conductor, it depends on their physical structure which is formed by mo...

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Main Author:	Bahri, Bibi Zulaika
Format:	Thesis
Language:	English English English
Published:	2019
Subjects:	QC501-766 Electricity and magnetism
Online Access:	http://eprints.uthm.edu.my/478/1/24p%20BIBI%20ZULAIKA%20BAHRI.pdf http://eprints.uthm.edu.my/478/2/BIBI%20ZULAIKA%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/478/3/BIBI%20ZULAIKA%20BHARI%20WATERMARK.pdf
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spelling	my-uthm-ep.4782021-07-25T07:02:51Z Investigation of intermediate layer for Ag/Si metal-semiconductor contacts 2019-09 Bahri, Bibi Zulaika QC501-766 Electricity and magnetism The intermediate layer is a crucial component in thin film metal contacts. In determining Ohmic characteristics, selection of materials used as metal contact can affect device performance. However, in determine a good electrical conductor, it depends on their physical structure which is formed by movement of free electron, thus affect the electrical properties. Yet, there are challenges in applying metal contact due to amorphous characteristic and in order to improve the quality of films, Nd:YAG laser were used as structural treatment. The thickness of top Ag layer is kept constant with different intermediate layer applied onto substrate.The characterizations were investigated by atomic force microscopy (AFM), four point probe (FPP) measurement and ultraviolet-visible spectroscopy (UV-Vis). The result indicates the RMS roughness was changed with the deposition time. The surface of Pt/Ag becomes rougher as deposition time increases. As deposition time increases, the resistivity shows some decrement. However, the fluctuated of resistivity may due to surface roughness scattering mechanism. The lowest resistivity was 6.29 × 10-3 Ω-cm deposited at 120 s. The calculated band gap was obtained as ~2.1-3.0 eV at different deposition time. The morphology of Au/Ag shows the improvement of laser treatment. RMS roughness was decreased with increment of deposition time. Deposition time by 120 s shows the smoother in small size of grain, which indicated the lowest resistivity with 4.26 × 10-4 Ω-cm. The calculated band gap was obtained as ~2.4-2.9 eV at different deposition time. For Pd/Ag, the treatment may alter the morphology of films. RMS roughness was changed with the deposition time. The surface becomes rougher as deposition time increases. This due to thickness of layer contains a higher concentration, but might crack and retard carrier mobility. The fluctuated of resistivity may due to scattering, which negative charge and potential barrier increase. The lowest resistivity was 4.10 × 10-3 Ω-cm deposited at 100 s. The calculated band gap was obtained as ~2.1-2.7 eV at different deposition time. As a conclusion, Au shows the better intermediate layer and has a good metal contact properties compared to Pt and Pd metal. 2019-09 Thesis http://eprints.uthm.edu.my/478/ http://eprints.uthm.edu.my/478/1/24p%20BIBI%20ZULAIKA%20BAHRI.pdf text en public http://eprints.uthm.edu.my/478/2/BIBI%20ZULAIKA%20COPYRIGHT%20DECLARATION.pdf text en staffonly http://eprints.uthm.edu.my/478/3/BIBI%20ZULAIKA%20BHARI%20WATERMARK.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Fakulti Sains Gunaan dan Teknologi
institution	Universiti Tun Hussein Onn Malaysia
collection	UTHM Institutional Repository
language	English English English
topic	QC501-766 Electricity and magnetism
spellingShingle	QC501-766 Electricity and magnetism Bahri, Bibi Zulaika Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
description	The intermediate layer is a crucial component in thin film metal contacts. In determining Ohmic characteristics, selection of materials used as metal contact can affect device performance. However, in determine a good electrical conductor, it depends on their physical structure which is formed by movement of free electron, thus affect the electrical properties. Yet, there are challenges in applying metal contact due to amorphous characteristic and in order to improve the quality of films, Nd:YAG laser were used as structural treatment. The thickness of top Ag layer is kept constant with different intermediate layer applied onto substrate.The characterizations were investigated by atomic force microscopy (AFM), four point probe (FPP) measurement and ultraviolet-visible spectroscopy (UV-Vis). The result indicates the RMS roughness was changed with the deposition time. The surface of Pt/Ag becomes rougher as deposition time increases. As deposition time increases, the resistivity shows some decrement. However, the fluctuated of resistivity may due to surface roughness scattering mechanism. The lowest resistivity was 6.29 × 10-3 Ω-cm deposited at 120 s. The calculated band gap was obtained as ~2.1-3.0 eV at different deposition time. The morphology of Au/Ag shows the improvement of laser treatment. RMS roughness was decreased with increment of deposition time. Deposition time by 120 s shows the smoother in small size of grain, which indicated the lowest resistivity with 4.26 × 10-4 Ω-cm. The calculated band gap was obtained as ~2.4-2.9 eV at different deposition time. For Pd/Ag, the treatment may alter the morphology of films. RMS roughness was changed with the deposition time. The surface becomes rougher as deposition time increases. This due to thickness of layer contains a higher concentration, but might crack and retard carrier mobility. The fluctuated of resistivity may due to scattering, which negative charge and potential barrier increase. The lowest resistivity was 4.10 × 10-3 Ω-cm deposited at 100 s. The calculated band gap was obtained as ~2.1-2.7 eV at different deposition time. As a conclusion, Au shows the better intermediate layer and has a good metal contact properties compared to Pt and Pd metal.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Bahri, Bibi Zulaika
author_facet	Bahri, Bibi Zulaika
author_sort	Bahri, Bibi Zulaika
title	Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
title_short	Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
title_full	Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
title_fullStr	Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
title_full_unstemmed	Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
title_sort	investigation of intermediate layer for ag/si metal-semiconductor contacts
granting_institution	Universiti Tun Hussein Onn Malaysia
granting_department	Fakulti Sains Gunaan dan Teknologi
publishDate	2019
url	http://eprints.uthm.edu.my/478/1/24p%20BIBI%20ZULAIKA%20BAHRI.pdf http://eprints.uthm.edu.my/478/2/BIBI%20ZULAIKA%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/478/3/BIBI%20ZULAIKA%20BHARI%20WATERMARK.pdf
_version_	1747830619959721984

Investigation of intermediate layer for Ag/Si metal-semiconductor contacts

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