Simulation, fabrication and characterization of PMOS transistor device

In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low volt...

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Main Author:	Yusuf, Siti Idzura
Format:	Thesis
Language:	English English English
Published:	2006
Subjects:	TK Electrical engineering Electronics Nuclear engineering TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf
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spelling	my-uthm-ep.71202022-06-08T02:10:36Z Simulation, fabrication and characterization of PMOS transistor device 2006-12 Yusuf, Siti Idzura TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t w a s also don e to determin e the right paramete r value to b e use d for fabrication process such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully produced . Fabrication simulation wa s performe d to produc e a 0.1 \|am an d 0.3p.m PMO S transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage (VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5\|im (400A) Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can result in a better performanc e of transistor. Anothe r paramete r must b e taken into consideration such as leakage current, resistivity and conductivity to get a better design of PMO S transistor in futur e research. 2006-12 Thesis http://eprints.uthm.edu.my/7120/ http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf text en public http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf text en staffonly http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Fakulti Kejuruteraan Elektrik dan Elektronik
institution	Universiti Tun Hussein Onn Malaysia
collection	UTHM Institutional Repository
language	English English English
topic	TK Electrical engineering Electronics Nuclear engineering TK7800-8360 Electronics
spellingShingle	TK Electrical engineering Electronics Nuclear engineering TK7800-8360 Electronics Yusuf, Siti Idzura Simulation, fabrication and characterization of PMOS transistor device
description	In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t w a s also don e to determin e the right paramete r value to b e use d for fabrication process such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully produced . Fabrication simulation wa s performe d to produc e a 0.1 \|am an d 0.3p.m PMO S transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage (VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5\|im (400A) Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can result in a better performanc e of transistor. Anothe r paramete r must b e taken into consideration such as leakage current, resistivity and conductivity to get a better design of PMO S transistor in futur e research.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Yusuf, Siti Idzura
author_facet	Yusuf, Siti Idzura
author_sort	Yusuf, Siti Idzura
title	Simulation, fabrication and characterization of PMOS transistor device
title_short	Simulation, fabrication and characterization of PMOS transistor device
title_full	Simulation, fabrication and characterization of PMOS transistor device
title_fullStr	Simulation, fabrication and characterization of PMOS transistor device
title_full_unstemmed	Simulation, fabrication and characterization of PMOS transistor device
title_sort	simulation, fabrication and characterization of pmos transistor device
granting_institution	Universiti Tun Hussein Onn Malaysia
granting_department	Fakulti Kejuruteraan Elektrik dan Elektronik
publishDate	2006
url	http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf
_version_	1747831115636277248

Simulation, fabrication and characterization of PMOS transistor device

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