Fabrikasi dan pencirian teknologi 0.13 um nMOS

Fabrikasi dan pencirian teknologi 0.13 um nMOS

Objektif projek ini adalah melakukan rekabentuk dan simulasi sebuah transistor nMOS dengan saiz salur 0.13 11m. Dengan melaksanakan peraturan penskalaan, transistor nMOS 0.13 11m direkabentuk daripada resipi transistor CMOS 0.18 11m yang telah direkabentuk dan disimulasikan sebelum ini dengan...

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书目详细资料
主要作者:	Ahmad, Afandi
格式:	Thesis
语言:	English
出版:	2003
主题:	TK Electrical engineering Electronics Nuclear engineering TK7800-8360 Electronics
在线阅读:	http://eprints.uthm.edu.my/7600/1/24p%20AFANDI%20AHMAD.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

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