Mitigation of oxygen presence in AlN (100) & (002) growth using RF magnetron sputtering
Aluminium nitride (AlN) nucleation layer (NL) is a useful nitride semiconductor for the growth of Gallium Nitride (GaN) on silicon. Major issues related to the fabrication of AlN films are on its crystallographic orientations and high processing temperatures. In order to fabricate AlN NL at low temp...
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| 格式: | Thesis |
| 語言: | English English English |
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2022
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| 在線閱讀: | http://eprints.uthm.edu.my/8399/1/24p%20ANIS%20SUHAILI%20BAKRI.pdf http://eprints.uthm.edu.my/8399/2/ANIS%20SUHAILI%20BAKRI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/8399/3/ANIS%20SUHAILI%20BAKRI%20WATERMARK.pdf |
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