Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique

Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique

Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes (UV-LED...

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書目詳細資料
主要作者:	Tahan, Muliana
格式:	Thesis
語言:	English English English
出版:	2021
主題:	TK2896-2985 Production of electricity by direct energy conversion
在線閱讀:	http://eprints.uthm.edu.my/989/1/24p%20MULIANA%20BINTI%20TAHAN.pdf http://eprints.uthm.edu.my/989/2/MULIANA%20BINTI%20TAHAN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/989/3/MULIANA%20BINTI%20TAHAN%20WATERMARK.pdf
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