Graphene floating gate flash memory performance with high-k tunnel barrier engineering

In recent years, due to outstanding properties such as durability material, ultrafast electronic performance and ultrasensitive for sensors, graphene has become a demanded material today and in the future due to its remarkable properties. For transistors, the scaling of component sizes has become a...

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Main Author:	Ahmad, Muhammad Hilman
Format:	Thesis
Language:	English
Published:	2020
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/101860/1/MuhammadHilmanAhmadMSKE2020.pdf.pdf
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spelling	my-utm-ep.1018602023-07-13T01:59:10Z Graphene floating gate flash memory performance with high-k tunnel barrier engineering 2020 Ahmad, Muhammad Hilman TK Electrical engineering. Electronics Nuclear engineering In recent years, due to outstanding properties such as durability material, ultrafast electronic performance and ultrasensitive for sensors, graphene has become a demanded material today and in the future due to its remarkable properties. For transistors, the scaling of component sizes has become a bottleneck for silicon-based materials. This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with the different type of high-k materials such as silicon nitride (Si3N4), aluminium oxide (AhO3), hafnium oxide (HfO2) and zirconium oxide (ZrO2) using Silvaco ATLAS TCAD tool simulation. The simulation work initially is to validate the experimental work with the simulation data and then determine the performance of the flash memory cell with different type of high-k materials in terms of memory window, program and erase (P/E) characteristics data retention and endurance. Next is to validate in the context of the memory performance trend between the experimental work and the proposed work. The memory window for flash memory cell for silicon dioxide (SiO2) is 15.4 V while for the memory window using variable oxide thickness (VARIOT) of 1/7 nm of SiO2/high-k material of four high-k materials for SiO2/Si3N4, SiO2/AhO3, SiO2/HfO2 and SiO2/ZrO2 tunnel barrier are 23.0 V, 20.0 V, 25.4 V and 26.0 V, respectively at the same P/E voltage of ±20 V programming and erasing voltage. Conventional SiO2 has good data retention but P/E characteristic is better with the introduction of VARIOT. The data retention capability of the four high-k materials is better than that of conventional SiO2, and the data can be retained by 75% (11.6 V) after 10 years of extrapolation with -1/1 V gate stress. For high-k material of SiO2/Si3N4, SiO2/HfO2 and SiO2/ZrO2 tunnel barrier, data are retained by 56% (12.9 V), 47% (11.9 V) and 33% (8 .6 V) while SiO2/AhO3 tunnel barrier with thickness 1/7 nm shows an excellent result among others with 83% (16.6 V) data retained. The endurance performance of the best high-k materials SiO2/AhO3 and SiO2/HfO2 was tested, which showed that the endurance retained 82% and 75% of the charge during 104 P/E cycles, respectively. 2020 Thesis http://eprints.utm.my/id/eprint/101860/ http://eprints.utm.my/id/eprint/101860/1/MuhammadHilmanAhmadMSKE2020.pdf.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149125 masters Universiti Teknologi Malaysia Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Ahmad, Muhammad Hilman Graphene floating gate flash memory performance with high-k tunnel barrier engineering
description	In recent years, due to outstanding properties such as durability material, ultrafast electronic performance and ultrasensitive for sensors, graphene has become a demanded material today and in the future due to its remarkable properties. For transistors, the scaling of component sizes has become a bottleneck for silicon-based materials. This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with the different type of high-k materials such as silicon nitride (Si3N4), aluminium oxide (AhO3), hafnium oxide (HfO2) and zirconium oxide (ZrO2) using Silvaco ATLAS TCAD tool simulation. The simulation work initially is to validate the experimental work with the simulation data and then determine the performance of the flash memory cell with different type of high-k materials in terms of memory window, program and erase (P/E) characteristics data retention and endurance. Next is to validate in the context of the memory performance trend between the experimental work and the proposed work. The memory window for flash memory cell for silicon dioxide (SiO2) is 15.4 V while for the memory window using variable oxide thickness (VARIOT) of 1/7 nm of SiO2/high-k material of four high-k materials for SiO2/Si3N4, SiO2/AhO3, SiO2/HfO2 and SiO2/ZrO2 tunnel barrier are 23.0 V, 20.0 V, 25.4 V and 26.0 V, respectively at the same P/E voltage of ±20 V programming and erasing voltage. Conventional SiO2 has good data retention but P/E characteristic is better with the introduction of VARIOT. The data retention capability of the four high-k materials is better than that of conventional SiO2, and the data can be retained by 75% (11.6 V) after 10 years of extrapolation with -1/1 V gate stress. For high-k material of SiO2/Si3N4, SiO2/HfO2 and SiO2/ZrO2 tunnel barrier, data are retained by 56% (12.9 V), 47% (11.9 V) and 33% (8 .6 V) while SiO2/AhO3 tunnel barrier with thickness 1/7 nm shows an excellent result among others with 83% (16.6 V) data retained. The endurance performance of the best high-k materials SiO2/AhO3 and SiO2/HfO2 was tested, which showed that the endurance retained 82% and 75% of the charge during 104 P/E cycles, respectively.
format	Thesis
qualification_level	Master's degree
author	Ahmad, Muhammad Hilman
author_facet	Ahmad, Muhammad Hilman
author_sort	Ahmad, Muhammad Hilman
title	Graphene floating gate flash memory performance with high-k tunnel barrier engineering
title_short	Graphene floating gate flash memory performance with high-k tunnel barrier engineering
title_full	Graphene floating gate flash memory performance with high-k tunnel barrier engineering
title_fullStr	Graphene floating gate flash memory performance with high-k tunnel barrier engineering
title_full_unstemmed	Graphene floating gate flash memory performance with high-k tunnel barrier engineering
title_sort	graphene floating gate flash memory performance with high-k tunnel barrier engineering
granting_institution	Universiti Teknologi Malaysia
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2020
url	http://eprints.utm.my/id/eprint/101860/1/MuhammadHilmanAhmadMSKE2020.pdf.pdf
_version_	1776100788968357888

Graphene floating gate flash memory performance with high-k tunnel barrier engineering

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