Graphene floating gate flash memory performance with high-k tunnel barrier engineering

Graphene floating gate flash memory performance with high-k tunnel barrier engineering

In recent years, due to outstanding properties such as durability material, ultrafast electronic performance and ultrasensitive for sensors, graphene has become a demanded material today and in the future due to its remarkable properties. For transistors, the scaling of component sizes has become a...

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书目详细资料
主要作者:	Ahmad, Muhammad Hilman
格式:	Thesis
语言:	English
出版:	2020
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/101860/1/MuhammadHilmanAhmadMSKE2020.pdf.pdf
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