Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques
In this study, the feasibility of using very high frequency (100 MHz to 200 MHz) Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique to deposit crystalline silicon carbide (SiC) thin films was investigated. High quality crystalline SiC film is very challenging to be produced since high...
محفوظ في:
المؤلف الرئيسي: | Azali, Muhamad Muizzudin |
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التنسيق: | أطروحة |
اللغة: | English |
منشور في: |
2022
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الموضوعات: | |
الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/101996/1/MuhamadMuizzudinAzaliMFS2022.pdf.pdf |
الوسوم: |
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مواد مشابهة
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Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
بواسطة: Omar, Muhammad Firdaus
منشور في: (2016) -
Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
بواسطة: Jusoh, Haezah Munyati
منشور في: (2020) -
Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
بواسطة: Rosman, Nor Hariz Kadir
منشور في: (2020) -
The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
بواسطة: Abd. Karim, Nur Farah Nadia
منشور في: (2019) -
Optimization of vhf-pecvd deposition parameters for silicon carbide film using in-situ and in-line gas phase analysis
بواسطة: Azali, Muhamad Muizzudin
منشور في: (2022)