Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method

Microelectrical discharge machining (^EDM) is a non-traditional machining technique that has high potential in the processing of semiconductor materials. This technique can produce complex three-dimensional (3D) shapes without cutting forces, to eliminate the tendency of crack propagation, due to th...

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主要作者:	Daud, Noor Dzulaika
格式:	Thesis
语言:	English
出版:	2022
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/102032/1/NoorDzulaikhaDaudPSKE2022.pdf.pdf
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id	my-utm-ep.102032
record_format	uketd_dc
spelling	my-utm-ep.1020322023-07-31T07:11:10Z Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method 2022 Daud, Noor Dzulaika TK Electrical engineering. Electronics Nuclear engineering Microelectrical discharge machining (^EDM) is a non-traditional machining technique that has high potential in the processing of semiconductor materials. This technique can produce complex three-dimensional (3D) shapes without cutting forces, to eliminate the tendency of crack propagation, due to the localized pressure on the workpiece. Additionally, it can also produce high precision and good surface quality machining results. However, this method has only been used to machine highly conductive materials such as metals and highly doped silicon (Si) wafers. While this method is not suitable for undoped or lightly doped Si wafers, increasing the conductivity of the Si wafers requires an additional process and cost. This work aims to investigate the \|iEDM performance for machining highly and lightly doped n-type Si wafers with various electrical conductivities. The machining performance was examined on both high- (1-10 Q.cm) and low- (0.001-0.005 Q.cm) resistivity Si wafers by means of a range of discharge energies (DE). The results revealed that the parameters of the electrical resistivity and DE of the \|iEDM have a great influence on the Si wafer machining performance, in terms of machining time, material removal rate (MRR), surface quality, surface roughness (SR), and material mapping. The minimum amount of DE required to machine the Si wafer was 5^J for both low and high-resistivity Si, of which the highest MRR of 5.842 x 10- 5 mm 3/s was observed for the low-resistivity Si. On the contrary, the best SR, Ra, of 0.6203 \|im was achieved for high-resistivity Si, indicating a higher carbon percentage after the machining process. A novel machining method called heat-assisted \|iEDM, which increases the conductivity of the lightly doped Si wafer prior to the machining, was used. A p-type Si wafer was tested, and the machining performance was observed while varying the temperature values of the Si wafers in the range of 30 - 250 °C. The results indicated that increasing the machining temperature contributes to a c o higher MRR, lower tool wear rate and lower SR. MRR of 1.43 x 10- mm /s and a SR of 1.487 \|im were achieved at 250 °C. This study is expected to promote the advancement of microelectromechanical systems devices in the electronics field, as well as the ability to achieve a high aspect ratio machining with high surface quality results. 2022 Thesis http://eprints.utm.my/id/eprint/102032/ http://eprints.utm.my/id/eprint/102032/1/NoorDzulaikhaDaudPSKE2022.pdf.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149130 phd doctoral Universiti Teknologi Malaysia Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Daud, Noor Dzulaika Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
description	Microelectrical discharge machining (^EDM) is a non-traditional machining technique that has high potential in the processing of semiconductor materials. This technique can produce complex three-dimensional (3D) shapes without cutting forces, to eliminate the tendency of crack propagation, due to the localized pressure on the workpiece. Additionally, it can also produce high precision and good surface quality machining results. However, this method has only been used to machine highly conductive materials such as metals and highly doped silicon (Si) wafers. While this method is not suitable for undoped or lightly doped Si wafers, increasing the conductivity of the Si wafers requires an additional process and cost. This work aims to investigate the \|iEDM performance for machining highly and lightly doped n-type Si wafers with various electrical conductivities. The machining performance was examined on both high- (1-10 Q.cm) and low- (0.001-0.005 Q.cm) resistivity Si wafers by means of a range of discharge energies (DE). The results revealed that the parameters of the electrical resistivity and DE of the \|iEDM have a great influence on the Si wafer machining performance, in terms of machining time, material removal rate (MRR), surface quality, surface roughness (SR), and material mapping. The minimum amount of DE required to machine the Si wafer was 5^J for both low and high-resistivity Si, of which the highest MRR of 5.842 x 10- 5 mm 3/s was observed for the low-resistivity Si. On the contrary, the best SR, Ra, of 0.6203 \|im was achieved for high-resistivity Si, indicating a higher carbon percentage after the machining process. A novel machining method called heat-assisted \|iEDM, which increases the conductivity of the lightly doped Si wafer prior to the machining, was used. A p-type Si wafer was tested, and the machining performance was observed while varying the temperature values of the Si wafers in the range of 30 - 250 °C. The results indicated that increasing the machining temperature contributes to a c o higher MRR, lower tool wear rate and lower SR. MRR of 1.43 x 10- mm /s and a SR of 1.487 \|im were achieved at 250 °C. This study is expected to promote the advancement of microelectromechanical systems devices in the electronics field, as well as the ability to achieve a high aspect ratio machining with high surface quality results.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Daud, Noor Dzulaika
author_facet	Daud, Noor Dzulaika
author_sort	Daud, Noor Dzulaika
title	Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
title_short	Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
title_full	Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
title_fullStr	Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
title_full_unstemmed	Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
title_sort	improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method
granting_institution	Universiti Teknologi Malaysia
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2022
url	http://eprints.utm.my/id/eprint/102032/1/NoorDzulaikhaDaudPSKE2022.pdf.pdf
_version_	1776100829755867136

Improving performance in micromachining of silicon wafer using heat-assisted micro electrical discharge method

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