The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition

The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydr...

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Main Author:	Abd. Karim, Nur Farah Nadia
Format:	Thesis
Language:	English
Published:	2019
Subjects:	Q Science (General)
Online Access:	http://eprints.utm.my/id/eprint/102203/1/NurFarahNadiaMFS2019.pdf
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spelling	my-utm-ep.1022032023-08-09T08:27:27Z The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition 2019 Abd. Karim, Nur Farah Nadia Q Science (General) The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydrogen (H2) was used as precursor gaseous. By manipulating the growth parameters such as hydrogen flow rate, growth temperature, growth time and RF power, the morphological and structural properties of SiC QDs were studied. The surface morphology of samples was observed through atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The structural properties of the sample were determined using Fourier transform infra-red (FTIR), emission dispersive x-ray (EDX) and Raman spectroscopy. It was found that a combination of dots formed islands on the substrate and the size of each dot was below 50 nm. By observing the cross-section view of the substrate, this self-assembled quantum dots followed Stranski-Krastanow (S-K) mode in which a combination of both islands and layer mode was formed. FTIR result showed absorption peaks located at 500 to 1000 cm-1 which proved the presence of SiC bonding. Further elemental mapping by EDX confirmed that the island and the layer underneath were formed from silicon, carbon and oxygen. This is in agreement with the observed SiC QDs cross-sectional FESEM image. The Raman spectra revealed three SiC polytypes which were 3C-SiC, 4H-SiC and 6H-SiC, and therefore in agreement with XRD results. All polytypes were considered as crystal due to small full width half maximum (FWHM) with crystallite size greater than 1 nm and sharp peaks were formed on Raman spectra. In conclusion, the SiC QDs growth parameters have shown a good impact to the morphological and structural properties of the grown quantum dots. 2019 Thesis http://eprints.utm.my/id/eprint/102203/ http://eprints.utm.my/id/eprint/102203/1/NurFarahNadiaMFS2019.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:146239 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	Q Science (General)
spellingShingle	Q Science (General) Abd. Karim, Nur Farah Nadia The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
description	The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydrogen (H2) was used as precursor gaseous. By manipulating the growth parameters such as hydrogen flow rate, growth temperature, growth time and RF power, the morphological and structural properties of SiC QDs were studied. The surface morphology of samples was observed through atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The structural properties of the sample were determined using Fourier transform infra-red (FTIR), emission dispersive x-ray (EDX) and Raman spectroscopy. It was found that a combination of dots formed islands on the substrate and the size of each dot was below 50 nm. By observing the cross-section view of the substrate, this self-assembled quantum dots followed Stranski-Krastanow (S-K) mode in which a combination of both islands and layer mode was formed. FTIR result showed absorption peaks located at 500 to 1000 cm-1 which proved the presence of SiC bonding. Further elemental mapping by EDX confirmed that the island and the layer underneath were formed from silicon, carbon and oxygen. This is in agreement with the observed SiC QDs cross-sectional FESEM image. The Raman spectra revealed three SiC polytypes which were 3C-SiC, 4H-SiC and 6H-SiC, and therefore in agreement with XRD results. All polytypes were considered as crystal due to small full width half maximum (FWHM) with crystallite size greater than 1 nm and sharp peaks were formed on Raman spectra. In conclusion, the SiC QDs growth parameters have shown a good impact to the morphological and structural properties of the grown quantum dots.
format	Thesis
qualification_level	Master's degree
author	Abd. Karim, Nur Farah Nadia
author_facet	Abd. Karim, Nur Farah Nadia
author_sort	Abd. Karim, Nur Farah Nadia
title	The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
title_short	The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
title_full	The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
title_fullStr	The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
title_full_unstemmed	The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
title_sort	morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2019
url	http://eprints.utm.my/id/eprint/102203/1/NurFarahNadiaMFS2019.pdf
_version_	1776100870467878912

The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition

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