Variable oxide thickness optimization and reliability analysis of Gate-All-Around floating gate for flash memory cell

Variable oxide thickness optimization and reliability analysis of Gate-All-Around floating gate for flash memory cell

Gate-All-Around (GAA) transistor is one of the excellent devices that has been utilized for flash memory applications owing to its gate coupling which led to a higher gate electrostatic control, cheaper manufacturing cost and bigger data storage. However, GAA structure with floating gate memory cell...

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書目詳細資料
主要作者:	A. Hamid, Farah
格式:	Thesis
語言:	English
出版:	2020
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/102451/1/FarahAHamidMSKE2020.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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