Diffusion coefficient to mobility ratio in low-dimensional nanostructures

The devices are moving towards nanometer domain where modification to it conventional properties need to be made to fit the modification. Diffusion coefficient and mobility are two important parameters to be analyzed as it determine how well particle moves in a semiconductor. New improvement in semi...

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Main Author:	Johari, Zaharah
Format:	Thesis
Language:	English
Published:	2009
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/12425/1/ZaharahJohariMFKE2009.pdf
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spelling	my-utm-ep.124252018-06-04T09:54:05Z Diffusion coefficient to mobility ratio in low-dimensional nanostructures 2009-06 Johari, Zaharah TK Electrical engineering. Electronics Nuclear engineering The devices are moving towards nanometer domain where modification to it conventional properties need to be made to fit the modification. Diffusion coefficient and mobility are two important parameters to be analyzed as it determine how well particle moves in a semiconductor. New improvement in semiconductors technology have brought to the shrinking of device dimensions from bulk (3-D) to 2-D nanostructures and further reduction of one or more Cartesian direction to nanoscale results in 1-D nanowire. In low dimensional devices the diffusion current cannot be neglected as it does for conventional devices. In degenerate regime, the diffusion coefficient becoming more important as the concentration gradient is emphasized. The degradation of mobility and diffusion coefficient of both nondegenerate and degenerately-doped low dimensional nanostructure with and without quantum emission is elaborated. The Einstein ratio that was established to be equal to the thermal voltage Vt alter in degenerate approximation which shown to be a function of nd depending on it dimensionalities. At higher electric field where quantum emission is present, the ratio is modified by the modulating factor. Present project has obtained extensions for the diffusion coefficient to the degraded mobility for both nondegenerate and degenerately-doped nanostructure with varying dimensionalities subjected to low and high electric field. 2009-06 Thesis http://eprints.utm.my/id/eprint/12425/ http://eprints.utm.my/id/eprint/12425/1/ZaharahJohariMFKE2009.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering [1] V.K.Arora, Ballistic quantum transport in nano devices and circuits, in Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International. 2008. p. 573-578. [2] V.K.Arora (2000). "Quantum Engineering of Nanoelectronic Devices: The role of quantum emission in limiting drift velocity and disffuion coefficient." Microelectronic Journal 31: 853-859. [3] V.K.Arora (2002). The Electron Temperature in Nanostructures Subjected to a High Electric Field. ICSE 2002, Malaysia. [4] Vijay K. Arora,” Drift diffusion and Einstein relation for electrons in silicon subjected to a high electric field,”Applied Physics Letter”, pp3763-3765,2002 [5] M. Ali Omar and L. Reggiani, Solid-State Electron. 30, 693 (1987) [6] Hachtel, G.D.R., A.E. , The charge distribution in high speed transistors, in Proceedings of the IEEE International Electron Devices Meeting, p. 152- 152, 1997, available in the IEEEXplore. [7] F.A. Lindholm and R.W. Ayers ,” Generalization Einstein Relation for degenerate semiconductors” Proc.IEEE (Letters), vol.56, pp. 371-372, March 1968 [8] S.L Sheng and F.A. Lindholm ,” Alternatives Formulation of Generalization Einstein Relation for degenerate semiconductors” Proc.IEEE (Letters), vol.56, pp. 1256-1257, March 1968 [9] A Sitangshu Bhattacharya, B. Debashis De and C. Kamakhya Prasad Ghatak, “Einstein Relation in Carbon Nanotubes and Quantum wires of nonlinear optical, optoelectronic, and relate dmaterials: Simplified theory, relative comparison and suggestion or an experimental determination, Physics of Semiconductor Devices, 2007. IWPSD 2007. International Worksho, pp 901-904,2007 [10] P.Borowik and J L Thobel,” Monte Carlo calculation of diffusion coefficient in degenerate bulk GaAs”, Semiconductor Sci. Technol.14(1999)pp 450-453
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Johari, Zaharah Diffusion coefficient to mobility ratio in low-dimensional nanostructures
description	The devices are moving towards nanometer domain where modification to it conventional properties need to be made to fit the modification. Diffusion coefficient and mobility are two important parameters to be analyzed as it determine how well particle moves in a semiconductor. New improvement in semiconductors technology have brought to the shrinking of device dimensions from bulk (3-D) to 2-D nanostructures and further reduction of one or more Cartesian direction to nanoscale results in 1-D nanowire. In low dimensional devices the diffusion current cannot be neglected as it does for conventional devices. In degenerate regime, the diffusion coefficient becoming more important as the concentration gradient is emphasized. The degradation of mobility and diffusion coefficient of both nondegenerate and degenerately-doped low dimensional nanostructure with and without quantum emission is elaborated. The Einstein ratio that was established to be equal to the thermal voltage Vt alter in degenerate approximation which shown to be a function of nd depending on it dimensionalities. At higher electric field where quantum emission is present, the ratio is modified by the modulating factor. Present project has obtained extensions for the diffusion coefficient to the degraded mobility for both nondegenerate and degenerately-doped nanostructure with varying dimensionalities subjected to low and high electric field.
format	Thesis
qualification_level	Master's degree
author	Johari, Zaharah
author_facet	Johari, Zaharah
author_sort	Johari, Zaharah
title	Diffusion coefficient to mobility ratio in low-dimensional nanostructures
title_short	Diffusion coefficient to mobility ratio in low-dimensional nanostructures
title_full	Diffusion coefficient to mobility ratio in low-dimensional nanostructures
title_fullStr	Diffusion coefficient to mobility ratio in low-dimensional nanostructures
title_full_unstemmed	Diffusion coefficient to mobility ratio in low-dimensional nanostructures
title_sort	diffusion coefficient to mobility ratio in low-dimensional nanostructures
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2009
url	http://eprints.utm.my/id/eprint/12425/1/ZaharahJohariMFKE2009.pdf
_version_	1747814936925437952

Diffusion coefficient to mobility ratio in low-dimensional nanostructures

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