Performance of Nd:YVO4 laser at various doping levels

The aim of this research to study the performance of the gain medium Nd:YVO4 laser crystal at various doping level. Diode laser centered at 808 nm was employed as an optical pumping source. The concentration under studied are including 0.5 at %, 1.0 at % and 1.5 at % neodymium ion doped into vanadat...

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Main Author:	Krishnan, Ganesan
Format:	Thesis
Language:	English
Published:	2010
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/15309/4/GanesanKrishnanMFSA2010.pdf
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spelling	my-utm-ep.153092017-09-19T04:43:43Z Performance of Nd:YVO4 laser at various doping levels 2010-12 Krishnan, Ganesan QC Physics The aim of this research to study the performance of the gain medium Nd:YVO4 laser crystal at various doping level. Diode laser centered at 808 nm was employed as an optical pumping source. The concentration under studied are including 0.5 at %, 1.0 at % and 1.5 at % neodymium ion doped into vanadate YVO4 crystal. The length for the three tested crystal is remained the same as 1 mm. The Nd:YVO4 crystals were pumped using end-pumping Technique. The output of the Nd:YVO4 crystal after being pumping was detected using spectrum analyzer, power meter and CCD video camera. The Nd:YVO4 laser beam producing line centre at 1063.98 nm with bandwidth of 1.15 nm. The beam spot of the light produced from each crystal is recorded using CCD camera. In general the beam spot is increasing with respect to the pump power. The slope conversion efficiency for 0.5 at % Nd+3 ion doped YVO4 crystal is 4.8 % with threshold power of 1404 mW. No crack is found with this crystal. In contrast the 1.0 at % Nd+3 doped in YVO4 crystal, suffering severe damage via long cracking on the surface. Thus the performance of the crystal is found the lowest among the three testing crystal. The slope conversion is 5.6 % with threshold power of 426 mW. The Nd:YVO4 crystal with doping level 1.5 at % having the optimum slope efficiency of 8.8 % with threshold power of 773 mW. However, this crystal also experience thermal stress causing cracking on the surface of crystal. As conclusion, the small concentration will be long lasting gain medium although the performance may not that good as compared to 1.5 at % Nd:YVO4 crystal. 2010-12 Thesis http://eprints.utm.my/id/eprint/15309/ http://eprints.utm.my/id/eprint/15309/4/GanesanKrishnanMFSA2010.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science Ding X., Wnag R., Zhang H., Yu X.Y., Wen W.Q., Wang P., Yao J.Q. (2009). Highefficiency Nd:YVO4 laser emission under direct pumping at 880 nm. Journal of Optics Communications. 282: 981-984. Hecht, J. (1992). Understanding Lasers An Entry Level Guide. New York: IEEE Press. Hu B.Q., Zhang Y.Z., Wu X., Chen X.L. (2001). Defects in large single crystals Nd:YVO4. Journal of Crystal Growth. 226: 511-516. Kasap, S. O. (2001). Optoelectronics and Photonics: Principles and Practices. New Jersey: Prentice-Hall. Koechner, W. (1976). Solid State Laser Engineering. First Edition. New York: Springer Verlag. Kuhn, K. J. (1998). Laser Engineering. New jersey: Prentice-Hall Inc. Milloni, P. W. (2010). Laser Physics. New Jersey: John Wiley & Sons. Meng X., Zhu L., Zhang H., Wang C., Chow Y.T., Lu M. (1999). Growth, morphology and laser performance of Nd:YVO4 crystal. Journal of Crystal Growth. 200: 199-203. Meschede, D. (2007). Optics, Light and Lasers : the Practical Approach to Modern Aspects of Photonics and Laser Physics. Weinheim: Wiley-VCH. Nor Aziawati, A. (2005). Development of a Water Cooling System For Nd: YAG Laser Chamber. Skudai: UTM. Silfvast W. T. (2004). Laser Fundamentals 2nd ed. Cambridge: Cambridge University Press. Sintec Optronics Pte Ltd. (2000). Basic of Laser Technology: Nd:YAG Lasers. Singapore: Application Notes. Wang Z. , Sun L., Zhang S., Meng X., Cheng R., Shao Z. (2001). Investigation of LD end-pumped Nd:YVO4 crystals with various doping levels and lengths. Journal of Optics and Laser Technology. 33: 47-51. Zhang H., Liu J., Wang J., Wang C.,Zhu L., Shao Z., Meng X., Hu X., Chow Y.T. and Jiang M. (2002). Laser properties of different Nd-doped concentration Nd:YVO4 laser crystals. Journal of Optics and Lasers in Engineering. 38: 527- 536.
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Krishnan, Ganesan Performance of Nd:YVO4 laser at various doping levels
description	The aim of this research to study the performance of the gain medium Nd:YVO4 laser crystal at various doping level. Diode laser centered at 808 nm was employed as an optical pumping source. The concentration under studied are including 0.5 at %, 1.0 at % and 1.5 at % neodymium ion doped into vanadate YVO4 crystal. The length for the three tested crystal is remained the same as 1 mm. The Nd:YVO4 crystals were pumped using end-pumping Technique. The output of the Nd:YVO4 crystal after being pumping was detected using spectrum analyzer, power meter and CCD video camera. The Nd:YVO4 laser beam producing line centre at 1063.98 nm with bandwidth of 1.15 nm. The beam spot of the light produced from each crystal is recorded using CCD camera. In general the beam spot is increasing with respect to the pump power. The slope conversion efficiency for 0.5 at % Nd+3 ion doped YVO4 crystal is 4.8 % with threshold power of 1404 mW. No crack is found with this crystal. In contrast the 1.0 at % Nd+3 doped in YVO4 crystal, suffering severe damage via long cracking on the surface. Thus the performance of the crystal is found the lowest among the three testing crystal. The slope conversion is 5.6 % with threshold power of 426 mW. The Nd:YVO4 crystal with doping level 1.5 at % having the optimum slope efficiency of 8.8 % with threshold power of 773 mW. However, this crystal also experience thermal stress causing cracking on the surface of crystal. As conclusion, the small concentration will be long lasting gain medium although the performance may not that good as compared to 1.5 at % Nd:YVO4 crystal.
format	Thesis
qualification_level	Master's degree
author	Krishnan, Ganesan
author_facet	Krishnan, Ganesan
author_sort	Krishnan, Ganesan
title	Performance of Nd:YVO4 laser at various doping levels
title_short	Performance of Nd:YVO4 laser at various doping levels
title_full	Performance of Nd:YVO4 laser at various doping levels
title_fullStr	Performance of Nd:YVO4 laser at various doping levels
title_full_unstemmed	Performance of Nd:YVO4 laser at various doping levels
title_sort	performance of nd:yvo4 laser at various doping levels
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2010
url	http://eprints.utm.my/id/eprint/15309/4/GanesanKrishnanMFSA2010.pdf
_version_	1747814992178053120

Performance of Nd:YVO4 laser at various doping levels

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