Characterization and model development of complementary metal oxide semiconductor floating gate defect

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Bibliographic Details
Main Author:	Wong, Yan Chiew
Format:	Thesis
Published:	2008
Subjects:	TK Electrical engineering Electronics Nuclear engineering
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id	my-utm-ep.17978
record_format	uketd_dc
spelling	my-utm-ep.179782011-11-18T04:30:16Z Characterization and model development of complementary metal oxide semiconductor floating gate defect 2008-00 Wong, Yan Chiew TK Electrical engineering. Electronics Nuclear engineering 2008-00 Thesis http://eprints.utm.my/id/eprint/17978/ masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Wong, Yan Chiew Characterization and model development of complementary metal oxide semiconductor floating gate defect
description
format	Thesis
qualification_level	Master's degree
author	Wong, Yan Chiew
author_facet	Wong, Yan Chiew
author_sort	Wong, Yan Chiew
title	Characterization and model development of complementary metal oxide semiconductor floating gate defect
title_short	Characterization and model development of complementary metal oxide semiconductor floating gate defect
title_full	Characterization and model development of complementary metal oxide semiconductor floating gate defect
title_fullStr	Characterization and model development of complementary metal oxide semiconductor floating gate defect
title_full_unstemmed	Characterization and model development of complementary metal oxide semiconductor floating gate defect
title_sort	characterization and model development of complementary metal oxide semiconductor floating gate defect
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2008
_version_	1747815163169341440

Characterization and model development of complementary metal oxide semiconductor floating gate defect

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