Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy

Metal-organic vapour phase epitaxy (MOVPE) is a versatile system that is capable of growing various materials especially the II-VI and III-V semiconductor materials. However, growth conditions for each individual system are different from the other and need to be individually calibrated. The work pr...

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Main Author:	Lim, Kheng Boo
Format:	Thesis
Language:	English
Published:	2008
Subjects:	QD Chemistry
Online Access:	http://eprints.utm.my/id/eprint/18030/1/LimKhengBooMFS2008.pdf.pdf
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spelling	my-utm-ep.180302021-07-29T07:06:33Z Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy 2008 Lim, Kheng Boo QD Chemistry Metal-organic vapour phase epitaxy (MOVPE) is a versatile system that is capable of growing various materials especially the II-VI and III-V semiconductor materials. However, growth conditions for each individual system are different from the other and need to be individually calibrated. The work presented in this thesis is to calibrate and determine the growth parameters for the growth of indium arsenide (InAs) quantum dots on gallium arsenide (GaAs) substrates via Stranski-Krastanov self-assembled growth mode. The experiment was done in the cleanroom using a newly installed MOVPE system at Ibnu Sina Institute for Fundamental Science Studies, UTM. The effect of various growth parameters on the dot nucleation have been studied using atomic force microscopy (AFM) for structural information and photoluminescence (PL) for optical characterization. The growth parameters studied include growth rate, temperature, and V/III ratio. A total of 15 samples have been grown with five samples represent each selected parameter. The surface morphology of each samples for each parameter was observed using AFM. Graphs of dots height and width were plotted and the optimal growth parameters were obtained. The result shows that optimal parameters for the InAs quantum dots growth were temperature of 550 oC, V/III ratio of 10 and growth time of 4 seconds. Three more samples with optimal parameters were then grown for the PL and energy dispersive X-ray (EDX) characterization. The results show strong confinement quantum dots have been successfully grown in this experiment. The results of this study can be used for further improvement of the indium arsenide quantum dots growth. 2008 Thesis http://eprints.utm.my/id/eprint/18030/ http://eprints.utm.my/id/eprint/18030/1/LimKhengBooMFS2008.pdf.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:135641 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QD Chemistry
spellingShingle	QD Chemistry Lim, Kheng Boo Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
description	Metal-organic vapour phase epitaxy (MOVPE) is a versatile system that is capable of growing various materials especially the II-VI and III-V semiconductor materials. However, growth conditions for each individual system are different from the other and need to be individually calibrated. The work presented in this thesis is to calibrate and determine the growth parameters for the growth of indium arsenide (InAs) quantum dots on gallium arsenide (GaAs) substrates via Stranski-Krastanov self-assembled growth mode. The experiment was done in the cleanroom using a newly installed MOVPE system at Ibnu Sina Institute for Fundamental Science Studies, UTM. The effect of various growth parameters on the dot nucleation have been studied using atomic force microscopy (AFM) for structural information and photoluminescence (PL) for optical characterization. The growth parameters studied include growth rate, temperature, and V/III ratio. A total of 15 samples have been grown with five samples represent each selected parameter. The surface morphology of each samples for each parameter was observed using AFM. Graphs of dots height and width were plotted and the optimal growth parameters were obtained. The result shows that optimal parameters for the InAs quantum dots growth were temperature of 550 oC, V/III ratio of 10 and growth time of 4 seconds. Three more samples with optimal parameters were then grown for the PL and energy dispersive X-ray (EDX) characterization. The results show strong confinement quantum dots have been successfully grown in this experiment. The results of this study can be used for further improvement of the indium arsenide quantum dots growth.
format	Thesis
qualification_level	Master's degree
author	Lim, Kheng Boo
author_facet	Lim, Kheng Boo
author_sort	Lim, Kheng Boo
title	Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
title_short	Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
title_full	Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
title_fullStr	Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
title_full_unstemmed	Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
title_sort	growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2008
url	http://eprints.utm.my/id/eprint/18030/1/LimKhengBooMFS2008.pdf.pdf
_version_	1747815175627472896

Growth parameters of indium arsenide quantum dots using metal organic vapour phase epitaxy

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