Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage

Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage

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Bibliographic Details
Main Author: Ibrahim, Muhammad Faisal
Format: Thesis
Published: 2009
Subjects:
TK Electrical engineering
Electronics Nuclear engineering
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id my-utm-ep.18227
record_format uketd_dc
spelling my-utm-ep.182272011-11-18T04:32:23Z Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage 2009-00 Ibrahim, Muhammad Faisal TK Electrical engineering. Electronics Nuclear engineering 2009-00 Thesis http://eprints.utm.my/id/eprint/18227/ masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution Universiti Teknologi Malaysia
collection UTM Institutional Repository
topic TK Electrical engineering
Electronics Nuclear engineering
spellingShingle TK Electrical engineering
Electronics Nuclear engineering
Ibrahim, Muhammad Faisal
Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
description
format Thesis
qualification_level Master's degree
author Ibrahim, Muhammad Faisal
author_facet Ibrahim, Muhammad Faisal
author_sort Ibrahim, Muhammad Faisal
title Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
title_short Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
title_full Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
title_fullStr Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
title_full_unstemmed Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
title_sort design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
granting_institution Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department Faculty of Electrical Engineering
publishDate 2009
_version_ 1747815223675322368

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