Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor
Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a one dimensional (ID) device. Based on the ID b...
Saved in:
Main Author: | |
---|---|
Format: | Thesis |
Published: |
2010
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|