Electrostatic potential and trajectory of an electron in single electron transistor

Tunneling of an electron from the electrode towards the island in single electron transistor (SET) is a quantum mechanical phenomenon. This means, that electron can either tunnels to the island or not depending on the probability. Therefore, the study on how the electron interacts with a quantum dot...

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Main Author:	Ithnin, Hanafi
Format:	Thesis
Language:	English
Published:	2012
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/28503/5/HanafiIthninMFS2012.pdf
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id	my-utm-ep.28503
record_format	uketd_dc
spelling	my-utm-ep.285032017-09-30T06:48:56Z Electrostatic potential and trajectory of an electron in single electron transistor 2012-07 Ithnin, Hanafi QC Physics Tunneling of an electron from the electrode towards the island in single electron transistor (SET) is a quantum mechanical phenomenon. This means, that electron can either tunnels to the island or not depending on the probability. Therefore, the study on how the electron interacts with a quantum dot should give the needed information in advancing the development of SET. With several assumptions, the electron trajectory from the electrode towards the island is studied in this research using classical approaches. The island is first developed by optimizing gallium arsenide (GaAs) cluster using the parallel version of GAMESS package. With the information from the optimized cluster, GaAs quantum dot is built as an island for the SET. The dot has a square bipyramidal shape with total 84 atoms in 1.6 nm3 volume. Then the external electric field is applied towards the dot to study the potential distribution in the vicinity of the dot. Using this potential distribution, the electron trajectory is mapped and plotted using MacMolPlt and GnuPlot programs. The plotted result shows how the electron moves towards the dot and sticks in a loop. It is found that the loop is caused by the attraction of atomic nucleus of one of the atom in the dot. As the conclusion, the electron trajectory is discovered and plotted from the source electrode to the island. On the other hand, the electron does not pass through the island to the drain because of nuclear attraction which can be improved in future simulation. 2012-07 Thesis http://eprints.utm.my/id/eprint/28503/ http://eprints.utm.my/id/eprint/28503/5/HanafiIthninMFS2012.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Ithnin, Hanafi Electrostatic potential and trajectory of an electron in single electron transistor
description	Tunneling of an electron from the electrode towards the island in single electron transistor (SET) is a quantum mechanical phenomenon. This means, that electron can either tunnels to the island or not depending on the probability. Therefore, the study on how the electron interacts with a quantum dot should give the needed information in advancing the development of SET. With several assumptions, the electron trajectory from the electrode towards the island is studied in this research using classical approaches. The island is first developed by optimizing gallium arsenide (GaAs) cluster using the parallel version of GAMESS package. With the information from the optimized cluster, GaAs quantum dot is built as an island for the SET. The dot has a square bipyramidal shape with total 84 atoms in 1.6 nm3 volume. Then the external electric field is applied towards the dot to study the potential distribution in the vicinity of the dot. Using this potential distribution, the electron trajectory is mapped and plotted using MacMolPlt and GnuPlot programs. The plotted result shows how the electron moves towards the dot and sticks in a loop. It is found that the loop is caused by the attraction of atomic nucleus of one of the atom in the dot. As the conclusion, the electron trajectory is discovered and plotted from the source electrode to the island. On the other hand, the electron does not pass through the island to the drain because of nuclear attraction which can be improved in future simulation.
format	Thesis
qualification_level	Master's degree
author	Ithnin, Hanafi
author_facet	Ithnin, Hanafi
author_sort	Ithnin, Hanafi
title	Electrostatic potential and trajectory of an electron in single electron transistor
title_short	Electrostatic potential and trajectory of an electron in single electron transistor
title_full	Electrostatic potential and trajectory of an electron in single electron transistor
title_fullStr	Electrostatic potential and trajectory of an electron in single electron transistor
title_full_unstemmed	Electrostatic potential and trajectory of an electron in single electron transistor
title_sort	electrostatic potential and trajectory of an electron in single electron transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2012
url	http://eprints.utm.my/id/eprint/28503/5/HanafiIthninMFS2012.pdf
_version_	1747815669005549568

Electrostatic potential and trajectory of an electron in single electron transistor

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