Simulation of 0.18 micron MOSFET and its characterization

The research is focused on the development of 0.18Âµm channel length of nchannel (NMOS) and p-channel (PMOS) enhancement mode MOSFET. Simulation of the process is carried out using Silvaco Athena to modify theoretical values and obtain more accurate process parameters. Non-ideal effect of a MOSFET d...

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Main Author:	Ahmad Radzi, Syafeeza
Format:	Thesis
Language:	English
Published:	2005
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/3005/1/SyafeezaAhmadRadziMFKE2005.pdf
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id	my-utm-ep.3005
record_format	uketd_dc
spelling	my-utm-ep.30052018-06-25T00:45:59Z Simulation of 0.18 micron MOSFET and its characterization 2005-10 Ahmad Radzi, Syafeeza TK Electrical engineering. Electronics Nuclear engineering The research is focused on the development of 0.18Âµm channel length of nchannel (NMOS) and p-channel (PMOS) enhancement mode MOSFET. Simulation of the process is carried out using Silvaco Athena to modify theoretical values and obtain more accurate process parameters. Non-ideal effect of a MOSFET design such as short channel effects is investigated. The most common effect that generally occurs in the short channel MOSFETs are channel modulation, drain induced barrier lowering (DIBL), punch-through and hot electron effect. Several advanced method such as lightly-doped drain (LDD), halo implant and retrograde well is applied to reduce the short channel effects. At the device simulation process, the electrical parameter is extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage or short channel effect of a MOSFET device 2005-10 Thesis http://eprints.utm.my/id/eprint/3005/ http://eprints.utm.my/id/eprint/3005/1/SyafeezaAhmadRadziMFKE2005.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Ahmad Radzi, Syafeeza Simulation of 0.18 micron MOSFET and its characterization
description	The research is focused on the development of 0.18Âµm channel length of nchannel (NMOS) and p-channel (PMOS) enhancement mode MOSFET. Simulation of the process is carried out using Silvaco Athena to modify theoretical values and obtain more accurate process parameters. Non-ideal effect of a MOSFET design such as short channel effects is investigated. The most common effect that generally occurs in the short channel MOSFETs are channel modulation, drain induced barrier lowering (DIBL), punch-through and hot electron effect. Several advanced method such as lightly-doped drain (LDD), halo implant and retrograde well is applied to reduce the short channel effects. At the device simulation process, the electrical parameter is extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage or short channel effect of a MOSFET device
format	Thesis
qualification_level	Master's degree
author	Ahmad Radzi, Syafeeza
author_facet	Ahmad Radzi, Syafeeza
author_sort	Ahmad Radzi, Syafeeza
title	Simulation of 0.18 micron MOSFET and its characterization
title_short	Simulation of 0.18 micron MOSFET and its characterization
title_full	Simulation of 0.18 micron MOSFET and its characterization
title_fullStr	Simulation of 0.18 micron MOSFET and its characterization
title_full_unstemmed	Simulation of 0.18 micron MOSFET and its characterization
title_sort	simulation of 0.18 micron mosfet and its characterization
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2005
url	http://eprints.utm.my/id/eprint/3005/1/SyafeezaAhmadRadziMFKE2005.pdf
_version_	1747814435342254080

Simulation of 0.18 micron MOSFET and its characterization

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