Graphene nanoribbon based CMOS modelling
Graphene nanoribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene nanoribbons, from both basic science and application points of view, is their electrical conductivity.The impressive proper...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/32122/5/AhmedKJameilMFKE2012.pdf |
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| 總結: | Graphene nanoribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene nanoribbons, from both basic science and application points of view, is their electrical conductivity.The impressive properties of graphene such as the linear energy dispersion relation, room-temperature mobility as high as 15000 cm2 /V s with current density 2A/mm .This is make it an remarkable candidate for electronic devices of the future. Graphene nanoribbon (GNR) with outstanding electrical and thermal properties indicates quantum confinement effect. GNR as a new material which can be used with Si complementary metal oxide semiconductor (CMOS) technology to overcome the integrated circuits hit transfer problems.GNRCMOS devices operated at high source-drain bias show a saturating I-V characteristic. In this project armchair GNR with semiconducting properties in the CMOS technology application is in our focus. Based on the presented model comparison study on transfer characteristic is reported which illustrates that the performance and electrical properties of GNRCMOS.The measurements of the GNRCMOS confirm larger than 0.1 eV bandgap with channel length 20 nm. These parameters have been replicated on CMOS. The low noise margin (NML) and the high noise margin (NMH) are 1.156 and 1.053 volt reported respectively which is comparable by SiCMOS with 0.6744 volt NML and 1.39 volt NMH respectively. The voltage transfer curve (VTC) of GNRCMOS is calculated (13.2978) while for the SiCMOS device is 7.999309. |
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