Graphene nanoribbon based CMOS modelling

Graphene nanoribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene nanoribbons, from both basic science and application points of view, is their electrical conductivity.The impressive proper...

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Main Author:	Jameil, Ahmed K.
Format:	Thesis
Language:	English
Published:	2012
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/32122/5/AhmedKJameilMFKE2012.pdf
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id	my-utm-ep.32122
record_format	uketd_dc
spelling	my-utm-ep.321222017-09-21T07:54:42Z Graphene nanoribbon based CMOS modelling 2012-06 Jameil, Ahmed K. TK Electrical engineering. Electronics Nuclear engineering Graphene nanoribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene nanoribbons, from both basic science and application points of view, is their electrical conductivity.The impressive properties of graphene such as the linear energy dispersion relation, room-temperature mobility as high as 15000 cm2 /V s with current density 2A/mm .This is make it an remarkable candidate for electronic devices of the future. Graphene nanoribbon (GNR) with outstanding electrical and thermal properties indicates quantum confinement effect. GNR as a new material which can be used with Si complementary metal oxide semiconductor (CMOS) technology to overcome the integrated circuits hit transfer problems.GNRCMOS devices operated at high source-drain bias show a saturating I-V characteristic. In this project armchair GNR with semiconducting properties in the CMOS technology application is in our focus. Based on the presented model comparison study on transfer characteristic is reported which illustrates that the performance and electrical properties of GNRCMOS.The measurements of the GNRCMOS confirm larger than 0.1 eV bandgap with channel length 20 nm. These parameters have been replicated on CMOS. The low noise margin (NML) and the high noise margin (NMH) are 1.156 and 1.053 volt reported respectively which is comparable by SiCMOS with 0.6744 volt NML and 1.39 volt NMH respectively. The voltage transfer curve (VTC) of GNRCMOS is calculated (13.2978) while for the SiCMOS device is 7.999309. 2012-06 Thesis http://eprints.utm.my/id/eprint/32122/ http://eprints.utm.my/id/eprint/32122/5/AhmedKJameilMFKE2012.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Jameil, Ahmed K. Graphene nanoribbon based CMOS modelling
description	Graphene nanoribbons are among the recently discovered carbon nanostructures, with unique characteristics for novel applications. One of the most important features of graphene nanoribbons, from both basic science and application points of view, is their electrical conductivity.The impressive properties of graphene such as the linear energy dispersion relation, room-temperature mobility as high as 15000 cm2 /V s with current density 2A/mm .This is make it an remarkable candidate for electronic devices of the future. Graphene nanoribbon (GNR) with outstanding electrical and thermal properties indicates quantum confinement effect. GNR as a new material which can be used with Si complementary metal oxide semiconductor (CMOS) technology to overcome the integrated circuits hit transfer problems.GNRCMOS devices operated at high source-drain bias show a saturating I-V characteristic. In this project armchair GNR with semiconducting properties in the CMOS technology application is in our focus. Based on the presented model comparison study on transfer characteristic is reported which illustrates that the performance and electrical properties of GNRCMOS.The measurements of the GNRCMOS confirm larger than 0.1 eV bandgap with channel length 20 nm. These parameters have been replicated on CMOS. The low noise margin (NML) and the high noise margin (NMH) are 1.156 and 1.053 volt reported respectively which is comparable by SiCMOS with 0.6744 volt NML and 1.39 volt NMH respectively. The voltage transfer curve (VTC) of GNRCMOS is calculated (13.2978) while for the SiCMOS device is 7.999309.
format	Thesis
qualification_level	Master's degree
author	Jameil, Ahmed K.
author_facet	Jameil, Ahmed K.
author_sort	Jameil, Ahmed K.
title	Graphene nanoribbon based CMOS modelling
title_short	Graphene nanoribbon based CMOS modelling
title_full	Graphene nanoribbon based CMOS modelling
title_fullStr	Graphene nanoribbon based CMOS modelling
title_full_unstemmed	Graphene nanoribbon based CMOS modelling
title_sort	graphene nanoribbon based cmos modelling
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2012
url	http://eprints.utm.my/id/eprint/32122/5/AhmedKJameilMFKE2012.pdf
_version_	1747815926707781632

Graphene nanoribbon based CMOS modelling

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