The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface

Silicon nanodots is a common zero-dimensional nanomaterial investigated for single-electron device applications in integrated circuits. The current study attempts to look into the ever-popular silicon self-assembly nanodot grown on different substrates, with emphasis on its growth theory and charact...

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Main Author: Idrees, Fatima Aldaw
Format: Thesis
Language:English
Published: 2013
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Online Access:http://eprints.utm.my/id/eprint/33848/5/FatimaAldawIdreesPFS2013.pdf
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spelling my-utm-ep.338482017-07-23T07:17:38Z The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface 2013-02 Idrees, Fatima Aldaw QC Physics Silicon nanodots is a common zero-dimensional nanomaterial investigated for single-electron device applications in integrated circuits. The current study attempts to look into the ever-popular silicon self-assembly nanodot grown on different substrates, with emphasis on its growth theory and characterizations. Discrepancy in its growth theories has led to misunderstanding and therefore innovative approaches are presented in this study to clarify and resolve the existing problems. A radio-frequency magnetron sputtering method was used for Silicon nanodots deposition, with the following conditions: argon gas flow rate 5-10 sccm, substrate temperature between 300-600 ºC, deposition time 7-20 minutes, and radio-frequency power between 100-150 W. This research covers both experimental and simulation works including the classical theory of nucleation. Generally, important parameters were first calculated then simulated using computer programming, and finally matched in order to estimate the values of critical energy ?G*, critical radius r*, surface energy ?, and free energy change per unit area ?Gv. The associated Volmer-Weber growth mode was then predicted. Observably, optimum growth parameters for the inception of silicon nanodots were found to be at 600 ºC/10 minutes/100W formed on corning glass substrate. Structural and optical properties have been characterized using atomic force microscope AFM, energy-dispersive X-ray spectroscopy EDX, X-Ray diffraction XRD, photoluminescence PL and scanning electron microscopy SEM. In addition, the AFM characterization results show the existence of nanodots with the estimated average size of 34.4 nm. The results from PL spectrum reveal the presence of a peak which corresponds to a bandgap energy of 1.80 eV and this was attributed to the quantum confinement of electron–hole pairs in quantum wells. A further confirmation using EDX measurement was made which showed the existence of 0.48 at.% of silicon on the substrate. XRD analysis reveals the crystalline structure for high temperature conditions due to orderly silicon nanodots formed on the substrate. The results proved that the properties of silicon nanodots on quartz SiO2, corning glass (7059) and silicon substrates were strongly dependent on the experimental conditions. 2013-02 Thesis http://eprints.utm.my/id/eprint/33848/ http://eprints.utm.my/id/eprint/33848/5/FatimaAldawIdreesPFS2013.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:69902?site_name=Restricted Repository phd doctoral Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution Universiti Teknologi Malaysia
collection UTM Institutional Repository
language English
topic QC Physics
spellingShingle QC Physics
Idrees, Fatima Aldaw
The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
description Silicon nanodots is a common zero-dimensional nanomaterial investigated for single-electron device applications in integrated circuits. The current study attempts to look into the ever-popular silicon self-assembly nanodot grown on different substrates, with emphasis on its growth theory and characterizations. Discrepancy in its growth theories has led to misunderstanding and therefore innovative approaches are presented in this study to clarify and resolve the existing problems. A radio-frequency magnetron sputtering method was used for Silicon nanodots deposition, with the following conditions: argon gas flow rate 5-10 sccm, substrate temperature between 300-600 ºC, deposition time 7-20 minutes, and radio-frequency power between 100-150 W. This research covers both experimental and simulation works including the classical theory of nucleation. Generally, important parameters were first calculated then simulated using computer programming, and finally matched in order to estimate the values of critical energy ?G*, critical radius r*, surface energy ?, and free energy change per unit area ?Gv. The associated Volmer-Weber growth mode was then predicted. Observably, optimum growth parameters for the inception of silicon nanodots were found to be at 600 ºC/10 minutes/100W formed on corning glass substrate. Structural and optical properties have been characterized using atomic force microscope AFM, energy-dispersive X-ray spectroscopy EDX, X-Ray diffraction XRD, photoluminescence PL and scanning electron microscopy SEM. In addition, the AFM characterization results show the existence of nanodots with the estimated average size of 34.4 nm. The results from PL spectrum reveal the presence of a peak which corresponds to a bandgap energy of 1.80 eV and this was attributed to the quantum confinement of electron–hole pairs in quantum wells. A further confirmation using EDX measurement was made which showed the existence of 0.48 at.% of silicon on the substrate. XRD analysis reveals the crystalline structure for high temperature conditions due to orderly silicon nanodots formed on the substrate. The results proved that the properties of silicon nanodots on quartz SiO2, corning glass (7059) and silicon substrates were strongly dependent on the experimental conditions.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Idrees, Fatima Aldaw
author_facet Idrees, Fatima Aldaw
author_sort Idrees, Fatima Aldaw
title The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
title_short The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
title_full The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
title_fullStr The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
title_full_unstemmed The growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
title_sort growth mechanism in self-assembly nanostructures of silicon/silicon dioxide interface
granting_institution Universiti Teknologi Malaysia, Faculty of Science
granting_department Faculty of Science
publishDate 2013
url http://eprints.utm.my/id/eprint/33848/5/FatimaAldawIdreesPFS2013.pdf
_version_ 1747816200001290240