Development of gate oxide short (GOS) model for deep submicron CMOS transistor

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Main Author: Cheow, Kwee Siong
Format: Thesis
Published: 2005
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id my-utm-ep.34782
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spelling my-utm-ep.347822013-10-17T01:28:07Z Development of gate oxide short (GOS) model for deep submicron CMOS transistor 2005-00 Cheow, Kwee Siong Unspecified 2005-00 Thesis http://eprints.utm.my/id/eprint/34782/ masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution Universiti Teknologi Malaysia
collection UTM Institutional Repository
topic Unspecified
spellingShingle Unspecified
Cheow, Kwee Siong
Development of gate oxide short (GOS) model for deep submicron CMOS transistor
description
format Thesis
qualification_level Master's degree
author Cheow, Kwee Siong
author_facet Cheow, Kwee Siong
author_sort Cheow, Kwee Siong
title Development of gate oxide short (GOS) model for deep submicron CMOS transistor
title_short Development of gate oxide short (GOS) model for deep submicron CMOS transistor
title_full Development of gate oxide short (GOS) model for deep submicron CMOS transistor
title_fullStr Development of gate oxide short (GOS) model for deep submicron CMOS transistor
title_full_unstemmed Development of gate oxide short (GOS) model for deep submicron CMOS transistor
title_sort development of gate oxide short (gos) model for deep submicron cmos transistor
granting_institution Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department Faculty of Electrical Engineering
publishDate 2005
_version_ 1747816255194136576