Low power low-dropout voltage regulator (LDO) with fast load transient response

With the recent explosion of devices driving “smart technologies” such as tablets, phones, all the portable and hand-held electronic devices such as cellular phones, PDA, MP3 players, GPS and other multi-media entertainments. The target for the portable battery operated product is towards reducing t...

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Main Author:	Lim, Lay Leng
Format:	Thesis
Language:	English
Published:	2013
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/36846/5/LimLayLengMFKE2013.pdf
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id	my-utm-ep.36846
record_format	uketd_dc
spelling	my-utm-ep.368462017-09-12T08:20:54Z Low power low-dropout voltage regulator (LDO) with fast load transient response 2013-01 Lim, Lay Leng TK Electrical engineering. Electronics Nuclear engineering With the recent explosion of devices driving “smart technologies” such as tablets, phones, all the portable and hand-held electronic devices such as cellular phones, PDA, MP3 players, GPS and other multi-media entertainments. The target for the portable battery operated product is towards reducing the number of battery cells, in order to decrease the cost and size. All these battery operated devices need power management circuits to work efficiently and extend the battery life, thus power regulation and power management have become one of the fastest growing sectors in the industry.The goal of this project is to design and implement a low power fully integrated CMOS low-dropout voltage regulator (LDO) based on quick response (QR) circuit to improve the load transient response. A 2.5V, 150mA with proposed high speed response circuit has been implemented in 0.25µm TSMC CMOS technology. The low-voltage operation ability, high current efficiency and low-voltage transient response performance can be achieved. With the small on-chip decoupling capacitor, the LDO with proposed QR circuit can achieve a fast load transient response with less transient overshoot or undershoot when instantaneous load fluctuation. By using the PMOS pass gate in the output stage we achieved a small regulator area and minimum dropout voltage for 100~150mA of output current. The proposed high speed response circuit included Memory circuit, PD_Charge and PD_Discharge circuit, Comparator and Vout_Discharge circuit. 2013-01 Thesis http://eprints.utm.my/id/eprint/36846/ http://eprints.utm.my/id/eprint/36846/5/LimLayLengMFKE2013.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Lim, Lay Leng Low power low-dropout voltage regulator (LDO) with fast load transient response
description	With the recent explosion of devices driving “smart technologies” such as tablets, phones, all the portable and hand-held electronic devices such as cellular phones, PDA, MP3 players, GPS and other multi-media entertainments. The target for the portable battery operated product is towards reducing the number of battery cells, in order to decrease the cost and size. All these battery operated devices need power management circuits to work efficiently and extend the battery life, thus power regulation and power management have become one of the fastest growing sectors in the industry.The goal of this project is to design and implement a low power fully integrated CMOS low-dropout voltage regulator (LDO) based on quick response (QR) circuit to improve the load transient response. A 2.5V, 150mA with proposed high speed response circuit has been implemented in 0.25µm TSMC CMOS technology. The low-voltage operation ability, high current efficiency and low-voltage transient response performance can be achieved. With the small on-chip decoupling capacitor, the LDO with proposed QR circuit can achieve a fast load transient response with less transient overshoot or undershoot when instantaneous load fluctuation. By using the PMOS pass gate in the output stage we achieved a small regulator area and minimum dropout voltage for 100~150mA of output current. The proposed high speed response circuit included Memory circuit, PD_Charge and PD_Discharge circuit, Comparator and Vout_Discharge circuit.
format	Thesis
qualification_level	Master's degree
author	Lim, Lay Leng
author_facet	Lim, Lay Leng
author_sort	Lim, Lay Leng
title	Low power low-dropout voltage regulator (LDO) with fast load transient response
title_short	Low power low-dropout voltage regulator (LDO) with fast load transient response
title_full	Low power low-dropout voltage regulator (LDO) with fast load transient response
title_fullStr	Low power low-dropout voltage regulator (LDO) with fast load transient response
title_full_unstemmed	Low power low-dropout voltage regulator (LDO) with fast load transient response
title_sort	low power low-dropout voltage regulator (ldo) with fast load transient response
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2013
url	http://eprints.utm.my/id/eprint/36846/5/LimLayLengMFKE2013.pdf
_version_	1747816467310575616

Low power low-dropout voltage regulator (LDO) with fast load transient response

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