Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition

Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition

Gallium Arsenide nanowires (GaAs NWs) have been grown on GaAs and Silicon (Si) substrates by gold-assisted and using metal-organic chemical vapor deposition (MOCVD) method. The structural properties and electrical conductivity were studied and was found to be strongly dependent on the pre-annealing...

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書目詳細資料
主要作者:	Muhammad, Rosnita
格式:	Thesis
語言:	English
出版:	2011
主題:	QD Chemistry
在線閱讀:	http://eprints.utm.my/id/eprint/36942/5/RosnitaMuhammadPFS2011.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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