Structure and electrical properties of gallium arsenide nanowires grown by metal organic chemical vapor deposition
Gallium Arsenide nanowires (GaAs NWs) have been grown on GaAs and Silicon (Si) substrates by gold-assisted and using metal-organic chemical vapor deposition (MOCVD) method. The structural properties and electrical conductivity were studied and was found to be strongly dependent on the pre-annealing...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
2011
|
| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/36942/5/RosnitaMuhammadPFS2011.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
成為第一個發表評論!