Modeling and simulation of bilayer graphene nanoribbon field effect transistor

Modeling and simulation of bilayer graphene nanoribbon field effect transistor

The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quant...

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书目详细资料
主要作者:	Mousavi, Seyed Mahdi
格式:	Thesis
语言:	English
出版:	2012
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/36985/1/SeyedMahdiMousaviMFKE2012.pdf
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