Modeling of graphene nanoribbon field effect transistor
The scaling of Field Effect Transistor (FET) at nanoscale assures better performance of the device. The phenomenon of downsizing the device dimensions has led to challenges such as short channel effects, leakage current, interconnect difficulties, high power consumption and quantum effects. Therefor...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2013
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/38443/5/MeisamRahmaniPFKE2013.pdf |
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