Modeling of graphene nanoribbon field effect transistor

Modeling of graphene nanoribbon field effect transistor

The scaling of Field Effect Transistor (FET) at nanoscale assures better performance of the device. The phenomenon of downsizing the device dimensions has led to challenges such as short channel effects, leakage current, interconnect difficulties, high power consumption and quantum effects. Therefor...

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书目详细资料
主要作者:	Rahmani, Meisam
格式:	Thesis
语言:	English
出版:	2013
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/38443/5/MeisamRahmaniPFKE2013.pdf
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