Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering

This research was conducted to prepare copper nitride thin films on glass substrates by reactive DC sputtering technique using a copper plate and nitrogen gas at 20 Pa as source. The Argon pressure 1x 10-1 mbar and DC voltage of 0.5 kV at room temperature. The deposition time varies from 1.0 hour to...

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Main Author:	Mohammed Ariff, Noor Azizun
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/38861/5/NoorAzizunMohammedAriffMFS2013.pdf
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spelling	my-utm-ep.388612017-07-06T03:45:44Z Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering 2013-07 Mohammed Ariff, Noor Azizun QC Physics This research was conducted to prepare copper nitride thin films on glass substrates by reactive DC sputtering technique using a copper plate and nitrogen gas at 20 Pa as source. The Argon pressure 1x 10-1 mbar and DC voltage of 0.5 kV at room temperature. The deposition time varies from 1.0 hour to 3.5 hours at interval of 0.5 hour. The thickness of films was measured using Ellisopmeter, UV-VIS 3101 Spectrophotometer to measure the optical properties of refractive index,n, transmittance, absorbance and reflectance in the visible light region and the photoluminescence property using Luminescence Spectrometer LS55.The films obtained were yellow to reddish-brown depending on the deposition time. For longer deposition time, the thin films turned thicker reddish-brown colour. Thickness of films obtained were in the range 1219.4 nm to 1227.0 nm and the refractive index, n, was about 3.80, constant for all samples. The transmittance increased but absorbance and reflectance decreased as the thickness increased over the wavelength range.. The avaege optical band gap energy, Eg obtained in range of 1.65 to 1.94 eV. The averange emmission peak for maximum intensity was about 419.0 nm obtained in the photoluminescence emission for all samples. This shows that the luminescence light is that of violet light. 2013-07 Thesis http://eprints.utm.my/id/eprint/38861/ http://eprints.utm.my/id/eprint/38861/5/NoorAzizunMohammedAriffMFS2013.pdf application/pdf en public masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Mohammed Ariff, Noor Azizun Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
description	This research was conducted to prepare copper nitride thin films on glass substrates by reactive DC sputtering technique using a copper plate and nitrogen gas at 20 Pa as source. The Argon pressure 1x 10-1 mbar and DC voltage of 0.5 kV at room temperature. The deposition time varies from 1.0 hour to 3.5 hours at interval of 0.5 hour. The thickness of films was measured using Ellisopmeter, UV-VIS 3101 Spectrophotometer to measure the optical properties of refractive index,n, transmittance, absorbance and reflectance in the visible light region and the photoluminescence property using Luminescence Spectrometer LS55.The films obtained were yellow to reddish-brown depending on the deposition time. For longer deposition time, the thin films turned thicker reddish-brown colour. Thickness of films obtained were in the range 1219.4 nm to 1227.0 nm and the refractive index, n, was about 3.80, constant for all samples. The transmittance increased but absorbance and reflectance decreased as the thickness increased over the wavelength range.. The avaege optical band gap energy, Eg obtained in range of 1.65 to 1.94 eV. The averange emmission peak for maximum intensity was about 419.0 nm obtained in the photoluminescence emission for all samples. This shows that the luminescence light is that of violet light.
format	Thesis
qualification_level	Master's degree
author	Mohammed Ariff, Noor Azizun
author_facet	Mohammed Ariff, Noor Azizun
author_sort	Mohammed Ariff, Noor Azizun
title	Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
title_short	Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
title_full	Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
title_fullStr	Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
title_full_unstemmed	Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering
title_sort	optical properties and photoluminescence of copper nitride thin film prepared by reactive dc sputtering
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2013
url	http://eprints.utm.my/id/eprint/38861/5/NoorAzizunMohammedAriffMFS2013.pdf
_version_	1747816531420512256

Optical properties and photoluminescence of copper nitride thin film prepared by reactive DC sputtering

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