Effects of chemical mechanical polishing (CMP) parameters on NIP/AL substrate surface characteristics
Chemical Mechanical Polishing (CMP) process is widely used for global planarization of substrate and wafer technology. The purpose of the CMP is to ensure wide planarization, uniformity, precise surface finish and non-defective surface. CMP has been used in the Hard Disk Drive industry as a final pr...
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| Format: | Thesis |
| Language: | English |
| Published: |
2014
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| Online Access: | http://eprints.utm.my/id/eprint/41826/1/MohdAidilRosliMFKM2014.pdf |
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