Kajian pencirian sifat struktur, optik dan elektrik saput tersejat timah (IV) oksida serta kesan dedahan gas
Thin films of tin (IV) oxide have been prepared using vacuum evaporation with thicknessess from 50-400 nm at pressure less than 10'5 mbar The as-prepared samples were annealed in air at selected temperatures of 200°C, 400°C and 600°C for 3 hours in air X-ray diffraction analysis showed that the...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
1997
|
| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/44409/1/RosnitaMuhammadMFS1997.pdf |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
| الملخص: | Thin films of tin (IV) oxide have been prepared using vacuum evaporation with thicknessess from 50-400 nm at pressure less than 10'5 mbar The as-prepared samples were annealed in air at selected temperatures of 200°C, 400°C and 600°C for 3 hours in air X-ray diffraction analysis showed that the annealed samples of amorphous form to polycrystal and oxidized Optical measurement indicated changes in the energy gap and refractive index with annealing temperature and sample thickness The resistivity of the film decreased with heating temperature and increased with time after exposed in oxygen, helium and air Electrical characteristic for sandwich samples (AI-SnO;-Al) showed that the conduction was space charge limited current and changes to Schottky conduction after exposed in air The a c conductivity at these samples is proportional to co\ where co is the angular frequency and s ia a temperature dependent quantity. The value of s decreased with increase in temperature. |
|---|