Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance

Since the number of transistors on Integrated Circuit (IC) double every 18 months, the scaling of a device in nanometer is highly required. Due to the downscaling process, conventional Metal-Oxide-Semiconductor Field-Effect- Transistors (MOSFET) lead to the short-channel effects, gate-leakage curren...

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Bibliographic Details
Main Author: Bahador, Siti Norazlin
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/48023/25/SitiNorazlinBahadorMFKE2014.pdf
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