Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process

This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objecti...

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Main Author:	Zahari, Muhamad Iskandar
Format:	Thesis
Published:	2014
Subjects:	TJ Mechanical engineering and machinery
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id	my-utm-ep.48396
record_format	uketd_dc
spelling	my-utm-ep.483962017-08-07T01:09:21Z Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process 2014 Zahari, Muhamad Iskandar TJ Mechanical engineering and machinery This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications 2014 Thesis http://eprints.utm.my/id/eprint/48396/ masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
topic	TJ Mechanical engineering and machinery
spellingShingle	TJ Mechanical engineering and machinery Zahari, Muhamad Iskandar Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
description	This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objective of this project is to design circuit and layout with low power and minimum layout area by applying inductance/capacitance (LC) tank architecture. The VCO on-chip circuit design is capable to perform operation at 900 MHz. The simulation of circuit and layout drawing will be accomplished using Tanner EDA Software Tool. The schematic was drawn using S-EDIT, simulation was done with T_SPICE and layout with L-EDIT. Low power saving design technique at IDLE is introduced by “powersave” terminal from power management block (not covered in this project). The power reduction technique reduces power from milliwatt range to nanowatt range at typical condition. The design was optimized to meet specifications for mobile device applications
format	Thesis
qualification_level	Master's degree
author	Zahari, Muhamad Iskandar
author_facet	Zahari, Muhamad Iskandar
author_sort	Zahari, Muhamad Iskandar
title	Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_short	Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full	Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_fullStr	Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_full_unstemmed	Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
title_sort	design of low power 900mhz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2014
_version_	1747817380067672064

Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process

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