Design of low power 900MHz complementary metal oxide semiconductor voltage controlled oscillator for 0.25 µm process
This project report focuses on the “Design of Low Power 900 MHz Complementary Metal Oxide Semiconductor Voltage Controlled Oscillator For 0.25 µm Process”. It covers the development and characterization of the VCO using Taiwan Semiconductor Manufacturing Company (TSMC) technologies. The main objecti...
Saved in:
Main Author: | Zahari, Muhamad Iskandar |
---|---|
Format: | Thesis |
Published: |
2014
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Integration of Cu interconnects for sub-0.25 um manufacturing /
by: Yap, Kuan Pei
Published: (1999) -
Peramalan dan pengukuran perambatan pada 900 MHz untuk sistem radio bersel
by: Mat, Mat Zain
Published: (2001) -
Characterisation of Ta2O5 thin films for sub-0.25um applications /
by: Tay, Mark Gek Leng
Published: (2000) -
Device Characterization of 0.8-µm CMOS Technology
by: Kooh, Roy Jinn Chye
Published: (2000) -
Kajian sifat magnet, elektrik, mekanik dan penyerapan gelombang mikro komposit ferit nikel-kobalt-zink getah asli termoplastik (Ni0.25Co0.25Zn0.5Fe2O4-NR/HDPE) /
by: Puryanti, Dwi
Published: (2002)