Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor

For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and relia...

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Main Author:	Hamzah, Muhammad Afiq Nurudin
Format:	Thesis
Language:	English
Published:	2014
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf
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spelling	my-utm-ep.506982020-07-08T08:52:20Z Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor 2014-03 Hamzah, Muhammad Afiq Nurudin TK Electrical engineering. Electronics Nuclear engineering For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and reliability devices. The frailty due to the Short Channel Effects (SCE) has limited the device scaling. In addition, the emergence of Carbon Nanotube (CNT) in the past two decades has been a remarkable breakthrough in solving for transistor SCE; but there has also been a problem in controlling its band gap energy. Graphene Nanoscroll (GNS) is one of the carbon-based materials that inherit most likely similar electrical properties as CNT. But GNS possesses an advantage to modulate its properties by varying its carbon layer overlapping region owing to the open edge spiral, resulting in band gap variations. This study is to investigate the GNS carrier statistic against its geometry variation and its performance as a MOSFET. The carrier statistic such as the energy band gap, density of states, carrier density and intrinsic velocity were modeled and the results show strong relation to the overlapping region of GNS. The energy band gap exhibits an inverse relation to the overlapping region and metallic properties was restored when the overlap has reached certain limit. The carrier density also increases with the overlapping region as a sign of gap narrowing. Moreover, the intrinsic velocity increases with overlap region and remains constant as it reaches graphene Fermi velocity, signifying ballistic transport near Fermi point. The charge distribution in GNSFET was characterized based on the Landauer Buttiker’s formalism. The output current shows good agreement with the experimental results at constant conductance and GNS structural parameters. Furthermore, the GNSFET demonstrated comparable performance to the CNTFET within ballistic limit. The GNSFET was also benchmarked with the latest 22nm MOSFET technology, which indicates faster switching capability due to enhancement in Subthreshold Swing (SS) and Drain Induced Barrier Lowering (DIBL). 2014-03 Thesis http://eprints.utm.my/id/eprint/50698/ http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:92100 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Hamzah, Muhammad Afiq Nurudin Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
description	For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and reliability devices. The frailty due to the Short Channel Effects (SCE) has limited the device scaling. In addition, the emergence of Carbon Nanotube (CNT) in the past two decades has been a remarkable breakthrough in solving for transistor SCE; but there has also been a problem in controlling its band gap energy. Graphene Nanoscroll (GNS) is one of the carbon-based materials that inherit most likely similar electrical properties as CNT. But GNS possesses an advantage to modulate its properties by varying its carbon layer overlapping region owing to the open edge spiral, resulting in band gap variations. This study is to investigate the GNS carrier statistic against its geometry variation and its performance as a MOSFET. The carrier statistic such as the energy band gap, density of states, carrier density and intrinsic velocity were modeled and the results show strong relation to the overlapping region of GNS. The energy band gap exhibits an inverse relation to the overlapping region and metallic properties was restored when the overlap has reached certain limit. The carrier density also increases with the overlapping region as a sign of gap narrowing. Moreover, the intrinsic velocity increases with overlap region and remains constant as it reaches graphene Fermi velocity, signifying ballistic transport near Fermi point. The charge distribution in GNSFET was characterized based on the Landauer Buttiker’s formalism. The output current shows good agreement with the experimental results at constant conductance and GNS structural parameters. Furthermore, the GNSFET demonstrated comparable performance to the CNTFET within ballistic limit. The GNSFET was also benchmarked with the latest 22nm MOSFET technology, which indicates faster switching capability due to enhancement in Subthreshold Swing (SS) and Drain Induced Barrier Lowering (DIBL).
format	Thesis
qualification_level	Master's degree
author	Hamzah, Muhammad Afiq Nurudin
author_facet	Hamzah, Muhammad Afiq Nurudin
author_sort	Hamzah, Muhammad Afiq Nurudin
title	Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
title_short	Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
title_full	Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
title_fullStr	Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
title_full_unstemmed	Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
title_sort	device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2014
url	http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf
_version_	1747817514628284416

Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor

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